파트넘버.co.kr FS10KM 데이터시트 PDF


FS10KM 반도체 회로 부품 판매점

HIGH-SPEED SWITCHING USE



Mitsubishi 로고
Mitsubishi
FS10KM 데이터시트, 핀배열, 회로
FS10KM-3
MITSUBISHI Nch POWER MOSFET
FS10KM-3
HIGH-SPEED SWITCHING USE
OUTLINE DRAWING
10 ± 0.3
Dimensions in mm
2.8 ± 0.2
f 3.2 ± 0.2
¡10V DRIVE
¡VDSS ............................................................................... 150V
¡rDS (ON) (MAX) ...........................................................170m
¡ID ........................................................................................ 10A
¡Integrated Fast Recovery Diode (TYP.) .......... 100ns
¡Viso ............................................................................... 2000V
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
2.54 ± 0.25
1.1 ± 0.2
1.1 ± 0.2
E
0.75 ± 0.15
2.54 ± 0.25
0.75 ± 0.15
123
w
q GATE
q w DRAIN
e SOURCE
e
TO-220FN
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg
Viso
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Isolation voltage
Weight
VGS = 0V
VDS = 0V
L = 100µH
Conditions
AC for 1minute, Terminal to case
Typical value
Ratings
150
±20
10
40
10
10
40
25
–55 ~ +150
–55 ~ +150
2000
2.0
Unit
V
V
A
A
A
A
A
W
°C
°C
V
g
Feb.1999


FS10KM 데이터시트, 핀배열, 회로
MITSUBISHI Nch POWER MOSFET
FS10KM-3
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol
Parameter
Test conditions
V (BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
ID = 1mA, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = 150V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 5A, VGS = 10V
ID = 5A, VGS = 10V
ID = 5A, VDS = 10V
VDS = 10V, VGS = 0V, f = 1MHz
VDD = 80V, ID = 5A, VGS = 10V, RGEN = RGS = 50
IS = 5A, VGS = 0V
Channel to case
IS = 10A, dis/dt = –100A/µs
Limits
Unit
Min. Typ. Max.
150 —
—V
±0.1
µA
— — 0.1 mA
2.0 3.0 4.0 V
— 122 170 m
0.61 0.85
V
— 12 — S
— 1250 — pF
— 175 — pF
— 75 — pF
— 25 — ns
— 30 — ns
— 60 — ns
— 34 — ns
— 1.0 1.5 V
— — 5.00 °C/W
— 100 — ns
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
50
40
30
20
10
0
0 50 100 150 200
CASE TEMPERATURE TC (°C)
OUTPUT CHARACTERISTICS
(TYPICAL)
10 VGS = 20V 10V 7V 6V
TC = 25°C
Pulse Test
8
6
MAXIMUM SAFE OPERATING AREA
3
2
102
7
5
3
2 tw = 10ms
101
7
5 100ms
3
2
1ms
100
7 TC = 25°C
5 Single Pulse DC
10ms
3
2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
5 VGS = 20V 10V 7V 6V
TC = 25°C
Pulse Test
4
5V
3
4 5V 2
21
0
0 0.4 0.8 1.2 1.6 2.0
DRAIN-SOURCE VOLTAGE VDS (V)
0
0 0.2 0.4 0.6 0.8 1.0
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999




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