FS10ASJ-3 반도체 회로 부품 판매점
HIGH-SPEED SWITCHING USE
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 Mitsubishi |
FS10ASJ-3
MITSUBISHI Nch POWER MOSFET
FS10ASJ-3
HIGH-SPEED SWITCHING USE
OUTLINE DRAWING
6.5
5.0 ± 0.2
r
Dimensions in mm
0.5 ± 0.1
¡4V DRIVE
¡VDSS ................................................................................ 150V
¡rDS (ON) (MAX) ........................................................... 160mΩ
¡ID ......................................................................................... 10A
¡Integrated Fast Recovery Diode (TYP.) ............. 90ns
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
0.9MAX.
2.3
1.0
2.3
A
0.5 ± 0.2
0.8
qwe
wr
q
e
q GATE
w DRAIN
e SOURCE
r DRAIN
MP-3
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg
—
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
VGS = 0V
VDS = 0V
L = 100µH
Typical value
Conditions
Ratings
150
±20
10
40
10
10
40
35
–55 ~ +150
–55 ~ +150
0.26
Unit
V
V
A
A
A
A
A
W
°C
°C
g
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS10ASJ-3
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol
Parameter
Test conditions
V (BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
ID = 1mA, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = 150V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 5A, VGS = 10V
ID = 5A, VGS = 4V
ID = 5A, VGS = 10V
ID = 5A, VDS = 10V
VDS = 10V, VGS = 0V, f = 1MHz
VDD = 80V, ID = 5A, VGS = 10V, RGEN = RGS = 50Ω
IS = 5A, VGS = 0V
Channel to case
IS = 10A, dis/dt = –100A/µs
Limits
Min. Typ. Max.
150 —
—
— — ±0.1
— — 0.1
1.0 1.5 2.0
— 120 160
— 125 165
— 0.60 0.80
— 18 —
— 1800 —
— 180 —
— 85 —
— 17 —
— 23 —
— 150 —
— 75 —
— 1.0 1.5
— — 3.57
— 90 —
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
50
40
30
20
10
0
0 50 100 150 200
MAXIMUM SAFE OPERATING AREA
3
2
102
7
5
3
2 tw = 10ms
101
7
5 100ms
3
2
1ms
100
7 TC = 25°C
5 Single Pulse
DC
10ms
3
2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2
CASE TEMPERATURE TC (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
Unit
V
µA
mA
V
mΩ
mΩ
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
OUTPUT CHARACTERISTICS
(TYPICAL)
10 VGS = 10V 5V 4V
TC = 25°C
Pulse Test
3V
8
OUTPUT CHARACTERISTICS
(TYPICAL)
5 VGS = 10V 5V 4V 3V
TC = 25°C
Pulse Test
4
2.5V
63
42
2
2V
0
0 0.4 0.8 1.2 1.6 2.0
DRAIN-SOURCE VOLTAGE VDS (V)
1
2V
0
0 0.2 0.4 0.6 0.8 1.0
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
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제조업체: Mitsubishi
( mitsubishi )
FS10ASJ-3 data
데이터시트 다운로드 :
[ FS10ASJ-3.PDF ]
[ FS10ASJ-3 다른 제조사 검색 ]
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