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ZVP3310A 반도체 회로 부품 판매점

P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET



Zetex Semiconductors 로고
Zetex Semiconductors
ZVP3310A 데이터시트, 핀배열, 회로
P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94
FEATURES
* 100 Volt VDS
* RDS(on)=20
ZVP3310A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at Tamb=25°C
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
SYMBOL
VDS
ID
IDM
VGS
Ptot
Tj:Tstg
D
G
S
E-Line
TO92 Compatible
VALUE
-100
-140
-1.2
± 20
625
-55 to +150
UNIT
V
mA
A
V
mW
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BVDSS -100
V ID=-1mA, VGS=0V
Gate-Source Threshold
Voltage
VGS(th) -1.5 -3.5 V
ID=-1mA, VDS= VGS
Gate-Body Leakage
IGSS
20 nA VGS=± 20V, VDS=0V
Zero Gate Voltage Drain
Current
IDSS
-1 µA VDS=-100V, VGS=0
-50 µA VDS=-80V, VGS=0V, T=125°C(2)
On-State Drain Current(1)
ID(on)
-300
mA VDS=-25 V, VGS=-10V
Static Drain-Source On-State RDS(on)
Resistance (1)
20
VGS=-10V,ID=-150mA
Forward Transconductance gfs
(1)(2)
50
mS VDS=-25V,ID=-150mA
Input Capacitance (2)
Common Source Output
Capacitance (2)
Ciss
Coss
50 pF
15 pF VDS=-25V, VGS=0V, f=1MHz
Reverse Transfer Crss 5 pF
Capacitance (2)
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
td(on)
tr
td(off)
tf
8 ns
8 ns VDD-25V, ID=-150mA
8 ns
8 ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle 2%
(2) Sample test.
3-432
Switching times measured with 50source impedance and <5ns rise time on a pulse generator
(
3
)


ZVP3310A 데이터시트, 핀배열, 회로
TYPICAL CHARACTERISTICS
ZVP3310A
-0.6
-0.4
-0.2
0
0
VGS=-20V
-16V
-12V
-10 -20 -30 -40
VDS - Drain Source Voltage (Volts)
Output Characteristics
-10V
-9V
-8V
-7V
-6V
-5V
-4.5V
-4V
-3.5V
-50
-0.6
-0.4
-0.2
0
-2 -4 -6 -8
VDS - Drain Source Voltage (Volts)
Saturation Characteristics
VGS=
-20V
-16V
-14V
-12V
-10V
-9V
-8V
-7V
-6V
-5V
-4V
-10
-10
-8
-6
ID=
-4 -0.3A
-2 -0.15A
-0.075A
0
0 -2 -4 -6 -8 -10
VGS-Gate Source Voltage (Volts)
Voltage Saturation Characteristics
-0.6
-0.4 VDS=
-10V
-0.2
0
0 -2 -4 -6 -8 -10
VGS-Gate Source Voltage (Volts)
Transfer Characteristics
VGS=-4V
-5V -6V -7V -8V -10V
100
50
-20V
10
-10
-100
-1000
ID-Drain Current (mA)
On-resistance v drain current
2.6
2.4 VGS=-10V
2.2 ID=-150mA
2.0
1.8
1.6
1.4
1.2
1.0
0.8
Drain-Source
Resistance
RDS(on)
VGS=VDS
ID=-1mA
Gate Threshold Voltage VGS(TH)
0.6
-40 -20 0 20 40 60 80 100 120 140 160 180
Tj-Junction Temperature (°C)
Normalised RDS(on) and VGS(th) v Temperature
3-433




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