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PDF ZVP2106G Data sheet ( Hoja de datos )
| Número de pieza | ZVP2106G | |
| Descripción | P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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SOT223 P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 MARCH 96
FEATURES
* 60 Volt VDS
* RDS(on)=5Ω
ZVP2106G
D
PARTMARKING DETAIL: - ZVP2106
COMPLEMENTARY TYPE: - ZVN2106G
S
D
G
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
VDS -60 V
Continuous Drain Current at Tamb=25°C
ID
-450 mA
Pulsed Drain Current
IDM -4 A
Gate Source Voltage
VGS ± 20 V
Power Dissipation at Tamb=25°C
Ptot
2W
Operating and Storage Temperature Range Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BVDSS -60
V ID=-1mA, VGS=0V
Gate-Source Threshold
Voltage
VGS(th) -1.5 -3.5 V
ID=-1mA, VDS= VGS
Gate-Body Leakage
Zero Gate Voltage Drain
Current
IGSS
IDSS
On-State Drain Current(1)
ID(on)
Static Drain-Source On-State RDS(on)
Resistance (1)
-1
20
-0.5
-100
5
nA
µA
µA
A
Ω
VGS=± 20V, VDS=0V
VDS=-60 V, VGS=0
VDS=-48 V, VGS=0V, T=125°C(2)
VDS=-18 V, VGS=-10V
VGS=-10V,ID=-500mA
Forward Transconductance gfs
(1)(2)
150
mS VDS=-18V,ID=-500mA
Input Capacitance (2)
Common Source Output
Capacitance (2)
Ciss
Coss
100 pF
60 pF
VDS=-18V, VGS=0V, f=1MHz
Reverse Transfer Crss 20 pF
Capacitance (2)
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
td(on)
tr
td(off)
tf
7 ns
15 ns VDD≈-18V, ID=-500mA
12 ns
15 ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%
(2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
3 - 426
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet ZVP2106G.PDF ] | |
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