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PDF ZVN4210G Data sheet ( Hoja de datos )
| Número de pieza | ZVN4210G | |
| Descripción | N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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SOT223 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 - NOVEMBER 1995
FEATURES
* Low RDS(on) = 1.5Ω
PARTMARKING DETAIL - ZVN4210
ZVN4210G
D
S
D
G
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
VDS 100 V
Continuous Drain Current at Tamb=25°C
ID
0.8 A
Pulsed Drain Current
IDM 6 A
Gate-Source Voltage
VGS ± 20 V
Power Dissipation at Tamb=25°C
Ptot
2W
Operating and Storage Temperature Range Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BVDSS 100
V ID=1mA, VGS=0V
Gate-Source Threshold Voltage VGS(th) 0.8 2.4 V
ID=1mA, VDS= VGS
Gate-Body Leakage
IGSS
100 nA VGS=± 20V, VDS=0V
Zero Gate Voltage Drain
Current
IDSS
10 µA VDS=100V, VGS=0
100 µA VDS=80V, VGS=0V, T=125°C(2)
On-State Drain Current(1)
ID(on)
2.5
A VDS=25V, VGS=10V
Static Drain-Source On-State RDS(on)
Resistance (1)
1.5 Ω
1.8 Ω
VGS=10V,ID=1.5A
VGS=5V,ID=500mA
Forward Transconductance(1)(2) gfs
250
mS VDS=25V,ID=1.5A
Input Capacitance (2)
Ciss
100 pF
Common Source Output
Capacitance (2)
Coss
40 pF VDS=25V, VGS=0V, f=1MHz
Reverse Transfer Capacitance (2) Crss
Turn-On Delay Time (2)(3)
td(on)
Rise Time (2)(3)
tr
Turn-Off Delay Time (2)(3)
td(off)
Fall Time (2)(3)
tf
12 pF
4 ns
8 ns VDD≈25V, ID=1.5A
20 ns
30 ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet ZVN4210G.PDF ] | |
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