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PDF ZVN2535A Data sheet ( Hoja de datos )
| Número de pieza | ZVN2535A | |
| Descripción | N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94
FEATURES
* 350 Volt VDS
RDS(on)=35Ω
ZVN2535A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at Tamb=25°C
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
SYMBOL
VDS
ID
IDM
VGS
Ptot
Tj:Tstg
D
G
S
E-Line
TO92 Compatible
VALUE
350
90
1
± 20
700
-55 to +150
UNIT
V
mA
A
V
mW
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
BVDSS 350
V ID=1mA, VGS=0V
Gate-Source
Threshold Voltage
VGS(th)
1
3
V ID=1mA, VDS= VGS
Gate-Body Leakage
Zero Gate Voltage
Drain Current
IGSS
IDSS
20 nA VGS=± 20V, VDS=0V
10 µA VDS=350V, VGS=0
400 µA VDS=280V, VGS=0V,
T=125°C(2)
On-State Drain Current(1)
ID(on)
250
Static Drain-Source On-State RDS(on)
Resistance (1)
35
mA VDS=25V, VGS=10V
Ω VGS=10V,ID=100mA
Forward Transconductance (1)( gfs
2)
100
mS VDS=25V,ID=100mA
Input Capacitance (2)
Common Source Output
Capacitance (2)
Ciss
Coss
70 pF
10 pF VDS=25 V, VGS=0V, f=1MHz
Reverse Transfer Capacitance Crss
(2)
4 pF
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
td(on)
tr
td(off)
tf
7 ns
7 ns VDD ≈25V, ID=100mA
16 ns
10 ns
3-372
Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%
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1
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1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet ZVN2535A.PDF ] | |
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