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ZVN2120G 반도체 회로 부품 판매점

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET



Zetex Semiconductors 로고
Zetex Semiconductors
ZVN2120G 데이터시트, 핀배열, 회로
SOT223 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 - FEBRUARY 1996 7
FEATURES:
* VDS - 200V
* RDS(ON) - 10
PARTMARKING DETAIL - ZVN2120
ZVN2120G
D
S
D
G
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
VDS 200 V
Continuous Drain Current at Tamb=25°C
ID
320 mA
Pulsed Drain Current
IDM 2 A
Gate-Source Voltage
VGS ± 20 V
Power Dissipation at Tamb=25°C
Ptot
2W
Operating and Storage Temperature Range Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BVDSS 200
V ID=1mA, VGS=0V
Gate-Source Threshold Voltage VGS(th)
Gate-Body Leakage
IGSS
Zero Gate Voltage Drain
Current
IDSS
1
3 V ID=1mA, VDS= VGS
20 nA VGS=± 20V, VDS=0V
10 µA VDS=200V, VGS=0V
100 µA VDS=160V, VGS=0V,
T=125°C(2)
On-State Drain Current(1)
ID(on)
500
Static Drain-Source On-State RDS(on)
Resistance (1)
10
mA VDS=25V, VGS=10V
VGS=10V, ID=250mA
Forward Transconductance(1)(2) gfs
Input Capacitance (2)
Ciss
Common Source Output
Capacitance (2)
Coss
100
85
20
mS VDS=25V, ID=250mA
pF
pF VDS=25V, VGS=0V, f=1MHz
Reverse Transfer Capacitance (2) Crss
Turn-On Delay Time (2)(3)
td(on)
Rise Time (2)(3)
tr
Turn-Off Delay Time (2)(3)
td(off)
Fall Time (2)(3)
tf
7 pF
8 ns
8 ns VDD25V, ID=250mA
20 ns
12 ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle 2% (2) Sample test.
(3) Switching times measured with 50source impedance and <5ns rise time on a pulse generator
3 - 390


ZVN2120G 데이터시트, 핀배열, 회로
ZVN2120G
TYPICAL CHARACTERISTICS
2.0
VGS=10V
8V
1.6 7V
6V
1.2 5V
0.8
4V
0.4
0
0
10 20 30 40
VDS - Drain Source Voltage (Volts)
Output Characteristics
3V
2V
50
1.4
1.2 VGS=
10V 8V
1.0 7V
6V
0.8 5V
4V
0.6
0.4
3V
0.2
0 2V
0 2 4 6 8 10
VDS - Drain Source Voltage (Volts)
Saturation Characteristics
20
16
12
ID=
8 1.0A
4
0.5A
0 0.1A
0 2 4 6 8 10
VGS-Gate Source Voltage (Volts)
Voltage Saturation Characteristics
VDS=
1.6 25V
1.4
1.2
1.0 10V
0.8
0.6
0.4
0.2
0
0 1 2 3 4 5 6 7 8 9 10
VGS-Gate Source Voltage (Volts)
Transfer Characteristics
100
10 ID=
1.0A
0.5A
0.1A
1
1
2 3 4 5 6 7 8 9 10
20
VGS-Gate Source Voltage (Volts)
On-resistance vs gate-source voltage
2.4
2.2
2.0
1.8
1.6
1.4
1.2
Drain-Source
Resistance
RDS(on)
VGS=10V
ID=250mA
1.0 VGS=VDS
0.8
0.6
Gate
Threshold
Voltage
ID=1mA
VGS(TH)
-40 -20 0 20 40 60 80 100 120 140 160 180
Tj-Junction Temperature (°C)
Normalised RDS(on) and VGS(th) v Temperature
3 - 391




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