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ZVN1409A 반도체 회로 부품 판매점

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET



Zetex Semiconductors 로고
Zetex Semiconductors
ZVN1409A 데이터시트, 핀배열, 회로
N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94
FEATURES
* 90 Volt VDS
* Low input capacitance
* Fast switching
ZVN1409A
D
G
S
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
SYMBOL
VDS
ID
IDM
VGS
Ptot
Tj:Tstg
E-Line
TO92 Compatible
VALUE
90
10
40
± 20
625
-55 to +150
UNIT
V
mA
mA
V
mW
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BVDSS
90
V ID=0.1mA, VGS=0V
Gate-Source Breakdown
Voltage
VGS(th) 0.8 2.4 V
ID=0.1mA, VDS= VGS
Gate Body Leakage
Zero Gate Voltage Drain
Current
IGSS
IDSS
100 nA
1 µA
100 (2) µA
VGS=± 20V, VDS=0V
VDS=90V, VGS=0V
VDS=72V, VGS=0V,
T=125°C
On State Drain Current (1)
Static Drain Source On State
Resistance (1)
ID(on)
RDS(on)
10
mA VDS=25 V, VGS=10V
250
VGS=10V,ID=5mA
Forward Transconductance (1)( gfs
2)
2
mS VDS=25V,ID=10mA
Input Capacitance (2)
Common Source Output
Capacitance (2)
Ciss
Coss
6.5 pF
3 pF
VDS=25 V, VGS=0V
f=1MHz
Reverse Transfer Capacitance Crss
(2)
0.65 pF
Turn-On Delay Time (2)(3)(4)
Rise Time (2)(3)(4)
Turn-Off Delay Time (2)(3)(4)
Fall Time (2)(3)(4)
td(on)
tr
td(off)
tf
3-358
0.3
0.5
0.35
0.5
ns
ns
ns
ns
VDD 25V, ID=5mA
(
1


ZVN1409A 데이터시트, 핀배열, 회로
ZVN1409A
TYPICAL CHARACTERISTICS
70
VGS=
60
10V
50
8V
40
30 6V
5V
20
4V
10
3V
0 10 20 30 40 50
VDS - Drain Source Voltage (Volts)
Output Characteristics
50
40
30
20
10
0
02 4 6 8
VDS - Drain Source Voltage (Volts)
Saturation Characteristics
VGS=
10V
8V
6V
5V
4V
3V
10
10
8
6
4 ID=
24mA
2 18mA
12mA
0
2 4 6 8 10
VGS-Gate Source Voltage (Volts)
Voltage Saturation Characteristics
50
VDS=
40 10V
30
20
10
0 2 4 6 8 10
VGS-Gate Source Voltage (Volts)
Transfer Characteristics
1000
500
VGS=4V 5V 6V 8V 10V
100
1
10 100
ID-Drain Current (mA)
On-resistance v drain current
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
Drain-Source
Resistance
RDS(on)
VGS=10V
ID=5mA
VGS=VDS
ID=1mA
0.8
0.6
Gate Threshold Voltage VGS(th)
0.4
-80 -60 -40 -20 0 20 40 60 80 100 120 140 160
Tj-Junction Temperature (C°)
Normalised RDS(on) and VGS(th) vs Temperature
3-359




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ZVN1409A

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET - Zetex Semiconductors