파트넘버.co.kr QS6M4 데이터시트 PDF


QS6M4 반도체 회로 부품 판매점

Small switching



ROHM Semiconductor 로고
ROHM Semiconductor
QS6M4 데이터시트, 핀배열, 회로
Transistors
Small switching
QS6M4
QS6M4
zFeatures
1) The QS6M4 combines Pch Trench MOSFET with a
Nch Trench MOSFET in a single TSMT6 package.
2) Pch Trench MOSFET and Nch Trench MOSFET
have a low on-state resistance with a fast switching.
3) Pch Trench MOSFET is neucted a low voltage drive
(2.5V).
zApplications
Load switch, inverter
zExternal dimensions (Unit : mm)
TSMT6
1pin mark
2.8
1.6
Each lead has same dimensions
Abbreviated symbol : M04
zStructure
Silicon P-channel MOS FET
Silicon N-channel MOS FET
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
QS6M4
Taping
TR
3000
zEquivalent circuit
(6) (5) (4)
1
2 2
1
(1) (2) (3)
1 ESD PROTECTION DIODE
2 BODY DIODE
(1) Tr1 (Nch) Source
(2) Tr1 (Nch) Gate
(3) Tr2 (Pch) Drain
(4) Tr2 (Pch) Source
(5) Tr2 (Pch) Gate
(6) Tr1 (Nch) Drain
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body diode)
Continuous
Pulsed
Total power dissipation
Channel temperature
Storage temperature
Pw10µs, Duty cycle1%
Symbol
VDSS
VGSS
ID
IDP
IS
ISP
PD
Tch
Tstg
Limits
Nchannel Pchannel
30 20
12 12
±1.5
±1.5
±6.0
±6.0
0.8 0.75
6.0 6.0
1.25
150
55 to +150
Unit
V
V
A
A
A
A
W
°C
°C
zThermal resistance (Ta=25°C)
Parameter
Channel to ambient
Symbol
Rth (ch-a)
Limits
100
Unit
°C / W
1/5


QS6M4 데이터시트, 핀배열, 회로
Transistors
N-ch
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Gate-source leakage
IGSS
Drain-source breakdown voltage V(BR) DSS
Zero gate voltage drain current IDSS
Gate threshold voltage
VGS (th)
Static drain-source on-state
resistance
RDS (on)
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Pulsed
Yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
Qg
Qgs
Qgd
Min.
30
0.5
1.0
Typ.
170
180
260
80
25
15
7
18
15
15
1.6
0.5
0.9
Max.
10
1
1.5
230
245
360
Unit Conditions
µA VGS=12V / VDS=0V
V ID=1mA / VGS=0V
µA VDS=30V / VGS=0V
V VDS=10V / ID=1mA
ID=1.5A / VGS=4.5V
mID=1.5A / VGS=4.0V
ID=1.0A / VGS=2.5V
S VDS=10V / ID=1.0A
pF VDS=10V
pF VGS=0V
pF f=1MHz
ns ID=1A, VDD 15V
ns VGS=4.5V
ns RL=15Ω / RG=10
ns
nC VDD 15V RL=10
nC VGS=4.5V RG=10
nC ID=1.5A
zBody diode characteristics (Source-Drain)
Parameter
Forward voltage
Pulsed
Symbol Min. Typ. Max. Unit
Conditions
VSD
1.2 V IS=3.2A / VGS=0V
QS6M4
2/5




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