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ROHM Semiconductor |
Transistors
Small switching
QS6M4
QS6M4
zFeatures
1) The QS6M4 combines Pch Trench MOSFET with a
Nch Trench MOSFET in a single TSMT6 package.
2) Pch Trench MOSFET and Nch Trench MOSFET
have a low on-state resistance with a fast switching.
3) Pch Trench MOSFET is neucted a low voltage drive
(2.5V).
zApplications
Load switch, inverter
zExternal dimensions (Unit : mm)
TSMT6
1pin mark
2.8
1.6
Each lead has same dimensions
Abbreviated symbol : M04
zStructure
Silicon P-channel MOS FET
Silicon N-channel MOS FET
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
QS6M4
Taping
TR
3000
zEquivalent circuit
(6) (5) (4)
∗1
∗2 ∗2
∗1
(1) (2) (3)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1) Tr1 (Nch) Source
(2) Tr1 (Nch) Gate
(3) Tr2 (Pch) Drain
(4) Tr2 (Pch) Source
(5) Tr2 (Pch) Gate
(6) Tr1 (Nch) Drain
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body diode)
Continuous
Pulsed
Total power dissipation
Channel temperature
Storage temperature
∗ Pw≤10µs, Duty cycle≤1%
Symbol
VDSS
VGSS
ID
IDP
IS
ISP
PD
Tch
Tstg
Limits
Nchannel Pchannel
30 −20
12 −12
±1.5
±1.5
±6.0
±6.0
0.8 −0.75
6.0 −6.0
1.25
150
−55 to +150
Unit
V
V
A
A∗
A
A∗
W
°C
°C
zThermal resistance (Ta=25°C)
Parameter
Channel to ambient
Symbol
Rth (ch-a)
Limits
100
Unit
°C / W
1/5
Transistors
N-ch
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Gate-source leakage
IGSS
Drain-source breakdown voltage V(BR) DSS
Zero gate voltage drain current IDSS
Gate threshold voltage
VGS (th)
Static drain-source on-state
resistance
∗
RDS (on)
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
Yfs ∗
Ciss
Coss
Crss
td (on) ∗
tr ∗
td (off) ∗
tf ∗
Qg ∗
Qgs ∗
Qgd ∗
Min.
−
30
−
0.5
−
−
−
1.0
−
−
−
−
−
−
−
−
−
−
Typ.
−
−
−
−
170
180
260
−
80
25
15
7
18
15
15
1.6
0.5
0.9
Max.
10
−
1
1.5
230
245
360
−
−
−
−
−
−
−
−
−
−
−
Unit Conditions
µA VGS=12V / VDS=0V
V ID=1mA / VGS=0V
µA VDS=30V / VGS=0V
V VDS=10V / ID=1mA
ID=1.5A / VGS=4.5V
mΩ ID=1.5A / VGS=4.0V
ID=1.0A / VGS=2.5V
S VDS=10V / ID=1.0A
pF VDS=10V
pF VGS=0V
pF f=1MHz
ns ID=1A, VDD 15V
ns VGS=4.5V
ns RL=15Ω / RG=10Ω
ns
nC VDD 15V RL=10Ω
nC VGS=4.5V RG=10Ω
nC ID=1.5A
zBody diode characteristics (Source-Drain)
Parameter
Forward voltage
∗Pulsed
Symbol Min. Typ. Max. Unit
Conditions
VSD ∗ −
− 1.2 V IS=3.2A / VGS=0V
QS6M4
2/5
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