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QEB421 반도체 회로 부품 판매점

SURFACE MOUNT INFRARED



Fairchild Semiconductor 로고
Fairchild Semiconductor
QEB421 데이터시트, 핀배열, 회로
QEB421
SURFACE MOUNT INFRARED
LIGHT EMITTING DIODE
PACKAGE DIMENSIONS
0.118 (3.0)
0.102 (2.6)
0.091 (2.3)
0.083 (2.1)
0.035 (0.9)
0.028 (0.7)
0.083 (2.1)
0.067 (1.7)
0.041 (0.1)
0.134 (3.4)
0.118 (3.0)
0.094 (2.4)
0.043 (1.1)
0.020 (0.5)
ANODE
0.024 (0.6)
0.016 (0.4)
0.007 (.18)
0.005 (.12)
NOTES:
1. Dimensions are in inches (mm)
2. Tolerance of ± .010 (.25) on all non nominal dimensions
unless otherwise specified.
FEATURES
Wavelength = 880 nm, AlGaAs
Wide Emission Angle, 120°
Surface Mount PLCC-2 Package
High Power
SCHEMATIC
ANODE
CATHODE
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Operating Temperature
Storage Temperature
Soldering Temperature (Flow)(2,3)
Continuous Forward Current
Reverse Voltage
Peak Forward Current(4)
Power Dissipation(1)
Symbol
Topr
Tstg
Tsol
IF
VR
IFM
PD
Rating
-55 to +100
-55 to +100
260 for 10 sec
100
5
1.75
180
Unit
°C
°C
°C
mA
V
A
mW
NOTES
1. Derate power dissipation linearly
2.4 mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols
are recommended as cleaning
agents.
4. Pulse conditions; tp = 100 µs,
T = 10 ms.
ELECTRICAL / OPTICAL CHARACTERISTICS (TA =25°C)
PARAMETER
Peak Emission Wavelength
Spectral Bandwidth
Emission Angle
Forward Voltage
Reverse Current
Radiant Intensity
Radiant Flux
Temp. Coeff. of IE
Temp. Coeff. of VF
Temp. Coeff. of D
Rise Time
Fall Time
TEST CONDITIONS
IF = 100 mA
IF = 100 mA
IF = 100 mA
IF = 100 mA, tp = 20 ms
IF = 1 A, tp = 100 µs
VR = 5 V
IF = 100 mA, tp = 20 ms
IF = 1 A, tp = 100 µs
IF = 100 mA, tp = 20 ms
IF = 100 mA
IF = 100 mA
IF = 100 mA
IF = 100 mA
SYMBOL
DP
D
0
VF
IR
Ie
>e
TCI
TCV
TCD
tr
tf
MIN.
4
TYP.
MAX.
880 —
80 —
120 —
1.5 1.8
3.0 3.8
—1
—8
48 —
10 —
-0.5 —
-4 —
0.25 —
—1
—1
UNITS
nm
nm
Deg.
V
µA
mW/sr
mW
%/K
mV/K
nm/K
µs
µs
2001 Fairchild Semiconductor Corporation
DS300385 2/26/01
1 OF 3
www.fairchildsemi.com


QEB421 데이터시트, 핀배열, 회로
TYPICAL PERFORMANCE CURVES
QEB421
SURFACE MOUNT INFRARED
LIGHT EMITTING DIODE
Fig. 1 Normalized Radiant Intensity vs. Forward Current
10
Normalized to:
IF = 100 mA Pulsed
tpw =100 us
1 Duty Cycle = 0.1%
TA = 25˚C
0.1
0.01
0.001
1
10 100
IF - FORWARD CURRENT (mA)
1000
Fig.3 Radiation Diagram
100 90 80
110 70
120 60
130 50
140 40
150 30
160 20
170 10
180 0
1.0 0.8 0.6 0.4 0.2 0.0 0.2 0.4 0.6 0.8 1.0
Fig. 2 Forward Current vs. Forward Voltage
102
IF Pulsed
tpw = 100 us
101 Duty Cycle = 0.1%
TA = 25˚C
100
10-1
10-2
10-3
0.8
1.0 1.2 1.4
VF - FORWARD VOLTAGE (V)
1.6
Fig. 4 Forward Voltage vs. Ambient Temperature
3
IF Pulsed
tpw = 100 us
Duty Cycle = 0.1%
2
IF = 50 mA
IF = 100 mA
IF = 20 mA
1
0
-40 -20 0 20 40 60
TA - TEMPERATURE (˚C)
80 100
Fig. 5 Spectral Response (TBD)
www.fairchildsemi.com
2 OF 3
2/26/01 DS300385




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