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PDF RA20H8087M Data sheet ( Hoja de datos )
| Número de pieza | RA20H8087M | |
| Descripción | 806-825/ 851-870MHz 20W 12.5V/ 3 Stage Amp. For MOBILE RADIO | |
| Fabricantes | Mitsubishi Electric Semiconductor | |
| Logotipo |  |
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MITSUBISHI RF MOSFET MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RA20H8087M
806-825/ 851-870MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO
DESCRIPTION
The RA20H8087M is a 20-watt RF MOSFET Amplifier Module
for 12.5-volt mobile radios that operate in the 806- to 870-MHz
range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (VGG=0V), only a small leakage current flows into the drain
and the RF input signal attenuates up to 60 dB. The output power
and drain current increase as the gate voltage increases. With a
gate voltage around 4V (minimum), output power and drain current
increases substantially. The nominal output power becomes
available at 4.5V (typical) and 5V (maximum). At VGG=5V, the
typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltage and controlling the output power with
the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(IDD≅0 @ VDD=12.5V, VGG=0V)
• Pout>20W, ηT>25% @ VDD=12.5V, VGG=5V, Pin=50mW
• Broadband Frequency Range: 806-825/ 851-870MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=5V
• Module Size: 66 x 21 x 9.88 mm
• Linear operation is possible by setting the quiescent drain current
with the gate voltage and controlling the output power with the
input power
BLOCK DIAGRAM
2
1
3
4
5
1 RF Input (Pin)
2 Gate Voltage (VGG), Power Control
3 Drain Voltage (VDD), Battery
4 RF Output (Pout)
5 RF Ground (Case)
PACKAGE CODE: H2S
ORDERING INFORMATION:
ORDER NUMBER
RA20H8087M-E01
RA20H8087M-01
(Japan - packed without desiccator)
SUPPLY FORM
Antistatic tray,
10 modules/tray
RA 20H8087M
MITSUBISHI ELECTRIC
1/10
25 April 2003
1 page  
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RA20H8087M
TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified)
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
60
f=825MHz,
50 VDD=12.5V,
P i n= 5 0 m W
40
12
IDD 10
P out
8
30 6
20 4
10 2
0
2.5
3 3.5 4 4.5 5
GATE VOLTAGE VGG(V)
0
5.5
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
60
f=851MHz,
50 VDD=12.5V,
Pin=50mW
40
I DD
12
10
Pout
8
30 6
20 4
10 2
0
2.5
3 3.5 4 4.5 5
GATE VOLTAGE VGG(V)
0
5.5
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
60 12
f=870MHz,
50 VDD=12.5V,
Pin=50mW
IDD 10
40 Pout 8
30 6
20 4
10 2
0
2.5
3 3.5 4 4.5 5
GATE VOLTAGE VGG(V)
0
5.5
RA 20H8087M
MITSUBISHI ELECTRIC
5/10
25 April 2003
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet RA20H8087M.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| RA20H8087M | 806-825/ 851-870MHz 20W 12.5V/ 3 Stage Amp. For MOBILE RADIO | Mitsubishi Electric Semiconductor |
| RA20H8087M-01 | 806-825/ 851-870MHz 20W 12.5V/ 3 Stage Amp. For MOBILE RADIO | Mitsubishi Electric Semiconductor |
| RA20H8087M-E01 | 806-825/ 851-870MHz 20W 12.5V/ 3 Stage Amp. For MOBILE RADIO | Mitsubishi Electric Semiconductor |
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