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RF Micro Devices |
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Typical Applications
• 915MHz ISM Band Products
• Digital Communications
RF2942
UHF QUADRATURE MODULATOR
AND TRANSMITTER
• Quadrature Modulation
• Portable Battery-Powered Equipment
Product Description
The RF2942 is an integrated power amplifier and quadra-
ture modulator IC. The quadrature modulator is driven
with a single-ended local oscillator (LO) source. The
quadrature phase generation of the LO is accomplished
using an internal passive network tuned for twice the
operating frequency. The LO frequency is at twice the RF
frequency to avoid interfering with an external synthe-
sizer.
Optimum Technology Matching® Applied
Si BJT
GaAs HBT
GaAs MESFET
Si Bi-CMOS
InGaP/HBT
SiGe HBT
Si CMOS
9GaN HEMT
SiGe Bi-CMOS
4 3 12
LO IN+ 14
LO2 OUT 15
Σ÷2
+45°
-45°
21
9 RF OUT
2 PLCS
-A-
4.00 SQ.
0.25 C A
1.00
0.85
2.00 TYP
0.25 C B
2 PLCS
0.80
0.65
0.05 C
0.05
0.01
0.20 C B
2 PLCS
2 PLCS
0.20 C A
Dimensions in mm.
12°
MAX
3.75 SQ.
-B-
1.88 TYP
-C- SEATING
PLANE
0.60
0.24
TYP
0.10 M C A B
0.35
0.23
Shaded lead is pin 1.
0.65
0.30
4 PLCS
1.85
1.55
SQ.
0.23
0.13
4 PLCS
0.75
0.65 0.50
Package Style: QFN, 16-Pin, 4x4
Features
• 2.0V to 3.6V Power Supply
• 902MHz to 928MHz Frequency Range
• 200mW Output Power
• Low LO Input Level
• Low Broadband Noise Floor
• Small Footprint
Ordering Information
RF2942
UHF Quadrature Modulator and Transmitter
RF2942 PCBA Fully Assembled Evaluation Board
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev A4 040115
11-195
RF2942
Absolute Maximum Ratings
Parameter
Supply Voltage
Power Down Voltage (VPD)
Input LO and RF Levels
Operating Ambient Temperature
Storage Temperature
Rating
-0.5 to +3.6
VCC + 0.4
+6
-40 to +85
-40 to +150
Unit
VDC
VDC
dBm
°C
°C
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Parameter
Power Supply
Voltage
Current
Carrier Input (LO IN)
Frequency Range
Power Level
Input Impedance
Modulation Input
Frequency Range
Modulation for POUT
Power (I & Q)
Quadrature Phase Error
I/Q Amplitude Imbalance
Input Impedance
RF Output
Power Output
Second Harmonic Output
Third Harmonic Output
Sideband Suppression
Carrier Suppression
Broadband Noise Floor
Specification
Min.
Typ.
Max.
2.8
2.0 3.6
170 225 260
10 24
1800 to 1860
-15 -6
50
DC 2
400
10
+2 +5
0.2
>10
23
21 22
-20 -25
-35 -45
-25 -40
-25
27
-90
Unit Condition
V
V
mA
mA
MHz
dBm
Ω
Specifications
Operating limits
TXEN = 0.0 V
T=25 °C, VCC=2.8V
1830 MHz
MHz
mVP-P
°
dB
kΩ
dBm
dBm
dBc
dBc
dBc
dBc
dBm/Hz
50Ω source, I,Q=400mVp-p
Differential
T=25°C, VCC=2.8V, LO power=-6dBm,
SSB, I/Q=400mVP-P sine wave, 500kHz
VCC = 3.0 V
VCC = 2.8 V
Modulation DC offset can be externally
adjusted for optimum suppression. Carrier
suppression is then typically better than
40 dB.
11-196
Rev A4 040115
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