|
Mitsubishi Electric Semiconductor |
PRELIMINARYNSootimcee: pTahriasmisentroict laimfiintsalasrepescuifbicjeactitotno. change.
RM20TPM-24,-2H
MITSUBISHI DIODE MODULES
RM20TPM-24,-2H
HIGH VOLTAGE MEDIUM POWER GENERAL USE
INSULATED TYPE
• IO DC output current ...................... 40A
• VRRM Repetitive peak reverse voltage
.... 1200/1600V
• 3 phase bridge
• Insulated Type
APPLICATION
AC motor controllers, DC motor controllers, Battery DC power supplies,
DC power supplies for control panels, and other general DC power equipment
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
13.5 15
15
8
2-φ4.5
10
14.5 28
57
70
5-M4
LABEL
Feb.1999
MITSUBISHI DIODE MODULES
RM20TPM-24,-2H
HIGH VOLTAGE MEDIUM POWER GENERAL USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VRRM
VRSM
Ea
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Recommended AC input voltage
24
1200
1350
370
Voltage class
Symbol
IO
IFSM
I2t
f
Tj
Tstg
Viso
Parameter
DC output current
Surge (non-repetitive) forward current
I2t for fusing
Maximum operating frequency
Junction temperature
Storage temperature
Isolation voltage
Conditions
Three-phase full wave rectifying circuit, TC=125°C
One half cycle at 60Hz, peak value
Value for one cycle of surge current
Charged part to case
— Mounting torque
Main terminal screw M4
Mounting screw M4
— Weight
Typical value
2H
1600
1700
480
Ratings
40
400
6.7×102
1000
–40~150
–40~125
2500
0.98~1.47
10~15
0.98~1.47
10~15
100
Unit
V
V
V
Unit
A
A
A2s
Hz
°C
°C
V
N·m
kg·cm
N·m
kg·cm
g
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
IRRM
VFM
Rth (j-c)
Rth (c-f)
Repetitive reverse current
Forward voltage
Thermal resistance
Contact thermal resistance
— Insulation resistance
Test conditions
Tj=125°C, VRRM applied
Tj=25°C, IFM=40A, instantaneous meas.
Junction to case
Case to fin, conductive grease applied
Measured with a 500V megohmmeter between main terminal
and case
Min.
—
—
—
—
Limits
Typ.
—
—
—
—
Max.
10
1.25
0.35
0.09
10 — —
Unit
mA
V
°C/ W
°C/ W
MΩ
Feb.1999
|