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Mitsubishi Electric Semiconductor |
MITSUBISHI DIODE MODULES
RM150DZ/CZ/UZ-M,-H,-24,-2H
HIGH POWER GENERAL USE
INSULATED TYPE
RM150DZ/CZ/UZ-M,-H,-24,-2H
• IF(AV) Average forward current .......... 150A
• VRRM Repetitive peak reverse voltage
.............. 400/800/1200/1600V
• DOUBLE ARMS
• Insulated Type
• UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
(DZ Type)
APPLICATION
AC motor controllers, DC motor controllers, Battery DC power supplies,
DC power supplies for control panels, and other general DC power equipment
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
3–φ6.5
4–M8
A1 K1 K2 A2
18 16
18 16
30 32 30
68.5
68.5
150
LABEL
(DZ Type)
(DZ)
A1
(CZ)
A1
(UZ)
A1
K1 K2
SR1
A2
SR2
K1 K2
SR1
A2
SR2
K1 K2
SR1
A2
SR2
(Bold line is connective bar.)
Feb.1999
MITSUBISHI DIODE MODULES
RM150DZ/CZ/UZ-M,-H,-24,-2H
HIGH POWER GENERAL USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VRRM
VRSM
VR (DC)
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Reverse DC voltage
M
400
480
320
Voltage class
H 24
800 1200
960 1350
640 960
Symbol
IF (RMS)
IF (AV)
IFSM
I2t
f
Tj
Tstg
Viso
Parameter
RMS forward current
Average forward current
Surge (non-repetitive) forward current
I2t for fusing
Maximum operating frequency
Junction temperature
Storage temperature
Isolation voltage
Conditions
Single-phase, half-wave 180° conduction, TC=109°C
One half chcle at 60Hz, peak value
Value for one cycle of surge current
Charged part to case
— Mounting torque
Main terminal screw M8
Mounting screw M6
— Weight
Typical value
2H
1600
1700
1280
Ratings
235
150
3500
5.1 × 104
1000
–40~+150
–40~+125
2500
8.83~10.8
90~110
1.96~3.92
20~40
300
Unit
V
V
V
Unit
A
A
A
A2s
Hz
°C
°C
V
N·m
kg·cm
N·m
kg·cm
g
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
IRRM
VFM
Rth (j-c)
Rth (c-f)
Repetitive reverse current
Forward voltage
Thermal resistance
Contact thermal resistance
— Insulation resistance
Test conditions
Tj=150°C, VRRM applied
Tj=25°C, IFM=450A, instantaneous meas.
Junction to case (per 1/2 module)
Case to fin, conductive grease applied (per 1/2 module)
Measured with a 500V megohmmeter between main terminal
and case
Min.
—
—
—
—
Limits
Typ.
—
—
—
—
Max.
30
1.35
0.22
0.1
10 — —
Unit
mA
V
°C/ W
°C/ W
MΩ
Feb.1999
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