파트넘버.co.kr TS1220-600H-TR 데이터시트 PDF


TS1220-600H-TR 반도체 회로 부품 판매점

SENSITIVE & STANDARD(12A SCRs)



STMicroelectronics 로고
STMicroelectronics
TS1220-600H-TR 데이터시트, 핀배열, 회로
®
SENSITIVE & STANDARD
TN12, TS12 and TYNx12 Series
12A SCRs
MAIN FEATURES:
Symbol
Value
Unit
IT(RMS)
12 A
VDRM/VRRM
600 to 1000
V
IGT
0.2 to 15
mA
DESCRIPTION
Available either in sensitive (TS12) or standard
(TYN, TN12...) gate triggering levels, the 12A SCR
series is suitable to fit all modes of control found in
applications such as overvoltage crowbar
protection, motor control circuits in power tools
and kitchen aids, in-rush current limiting circuits,
capacitive discharge ignition, voltage regulation
circuits...
Available in though-hole or surface-mount
packages, they provide an optimized performance
in a limited space area.
A
G
K
A
A
KA
G
DPAK
(TS12-B)
(TN12-B)
A
KA
G
D2PAK
(TN12-G)
A
KA
G
IPAK
(TS12-H)
(TN12-H)
K
A
G
TO-220AB
(TYN)
ABSOLUTE RATINGS (limiting values)
Symbol
IT(RMS)
IT(AV)
Parameter
RMS on-state current (180° conduction angle)
Average on-state current (180° conduction angle)
Tc = 105°C
Tc = 105°C
ITSM
It
dI/dt
IGM
PG(AV)
Tstg
Tj
VRGM
Non repetitive surge peak
on-state current
tp = 8.3 ms
tp = 10 ms
I t Value for fusing
Critical rate of rise of on-state
current IG = 2 x IGT , tr 100 ns
Peak gate current
tp = 10 ms
F = 60 Hz
tp = 20 µs
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
Maximum peak reverse gate voltage (for TN12 & TYN)
Tj = 25°C
Tj = 25°C
Tj = 125°C
Tj = 125°C
Tj = 125°C
Value
Unit
12
8
DPAK /
IPAK
115
110
60
D PAK /
TO-220AB
146
140
98
A
A
A
AS
50 A/µs
4
1
- 40 to + 150
- 40 to + 125
5
A
W
°C
V
September 2000 - Ed: 3
1/10


TS1220-600H-TR 데이터시트, 핀배열, 회로
TN12, TS12 and TYNx12 Series
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
s SENSITIVE
Symbol
Test Conditions
IGT
VGT
VGD
VRG
IH
IL
dV/dt
VTM
Vt0
Rd
IDRM
IRRM
VD = 12 V RL = 140
VD = VDRM RL = 3.3 kRGK = 1 k
IRG = 10 µA
IT = 50 mA RGK = 1 k
IG = 1 mA RGK = 1 k
VD = 67 % VDRM RGK = 220
ITM = 24 A tp = 380 µs
Threshold voltage
Dynamic resistance
VDRM = VRRM RGK = 220
Tj = 125°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
MAX.
MAX.
MIN.
MIN.
MAX.
MAX.
MIN.
MAX.
MAX.
MAX.
MAX.
TS1220
200
0.8
0.1
8
5
6
5
1.6
0.85
30
5
2
s STANDARD
Symbol
Test Conditi ons
IGT
VGT
VGD
IH
IL
dV/dt
VTM
Vt0
Rd
IDRM
IRRM
VD = 12 V RL = 33
VD = VDRM RL = 3.3 k
IT = 500 mA Gate open
IG = 1.2 IGT
VD = 67 % VDRM Gate open
ITM = 24 A tp = 380 µs
Threshold voltage
Dynamic resistance
VDRM = VRRM
Tj = 125°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
MIN.
MAX.
MAX.
MIN.
MAX.
MAX.
MIN.
MAX.
MAX.
MAX.
MAX.
TN1215
TYN
B/H G x12T x12
2 0.5
15 5
1.3
0.2
40 30 15
80 60 30
200 40
1.6
0.85
30
5
2
2
15
30
60
200
Unit
µA
V
V
V
mA
mA
V/µs
V
V
m
µA
mA
Unit
mA
V
V
mA
mA
V/µs
V
V
m
µA
mA
THERMAL RESISTANCES
Symbol
Rth(j-c)
Rth(j-a)
Junction to case (DC)
Junction to ambient
S = Copper surface under tab
Parameter
S = 1 cm
S = 0.5 cm
TO-220AB
IPAK
D PAK
DPAK
Value
1.3
60
100
45
70
Unit
°C/W
°C/W
2/10




PDF 파일 내의 페이지 : 총 10 페이지

제조업체: STMicroelectronics

( stm )

TS1220-600H-TR data

데이터시트 다운로드
:

[ TS1220-600H-TR.PDF ]

[ TS1220-600H-TR 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


TS1220-600H-TR

SENSITIVE & STANDARD(12A SCRs) - STMicroelectronics