파트넘버.co.kr U444 데이터시트 PDF


U444 반도체 회로 부품 판매점

N-Channel JFET Monolithic Dual



Calogic  LLC 로고
Calogic LLC
U444 데이터시트, 핀배열, 회로
N-Channel JFET
Monolithic Dual
CORPORATION
U443 / U444
FEATURES
High Gain . . . . . . . . . . . . . . . . . . . . . . . gfs > 6 mS typical
Low Leakage . . . . . . . . . . . . . . . . . . . . . . IG < 1pA typical
•• Low Noise
APPLICATIONS
Differential Wideband Amplifiers
VHF/UHF Amplifiers
Test and Measurement
•• Multi-Chip/Hybrids
DESCRIPTION
The U443 Series is an N-Channel Monolithic Dual JFET
designed for high speed amplifier circuits. Featuring high gain
( > 6 mS typical), low leakage (< 1pA typical) and low noise
this device is an excellent choice for high performance test
and measurement, wideband amplifiers and VHF/UHF
circuits.
ORDERING INFORMATION
Part Package
Temperature Range
U443-4 Hermetic M0-002AG (TO-78) -55oC to +150oC
XU443-4 Sorted Chips in Carriers
-55oC to +150oC
PIN CONFIGURATION
TO-78
CJ1
C
S2 D2
G1
G2
D1 S1
1 SOURCE 1
2 DRAIN 1
3 GATE 1
4 CASE/BODY
5 SOURCE 2
6 DRAIN 2
7 GATE 2
4
3
5
6
217
BOTTOM VIEW


U444 데이터시트, 핀배열, 회로
CORPORATION
U443 / U444
ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise noted)
Parameter/Test Condition
Symbol
Gate-Drain Voltage
Gate-Source Voltage
Gate-Gate Voltage
Forward Gate Current
Power Dissipation (per side)
(total)
Power Derating (per side)
(total)
Operating Junction Temperature
Storage Temperature
Lead Temperature (1/16" from case for 10 seconds)
VGD
VGS
VGG
IG
PD
TJ
Tstg
TL
Limit
-25
-25
±50
50
367
500
3
4
-55 to 150
-65 to 200
300
Unit
V
V
V
mA
mW
mW
mW/ oC
mW/ oC
oC
oC
oC
ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise noted)
SYMBOL
CHARACTERISTCS
TYP1
U443
U444
MIN MAX MIN MAX
UNIT
TEST CONDITIONS
STATIC
V(BR)GSS
VGS(OFF)
IDSS
Gate-Source Breakdown Voltage
Gate-Source Cut off Voltage
Saturation Drain Current 2
-35 -25
-25
-3.5 -1 -6 -1 -6
15 6 30 6 30
IG = -1µA, VDS = 0V
V
VDS = 10V, ID = 1nA
mA VDS = 10V, VGS = 0V
IGSS Gate Reverse Current
-1
-500
-500 pA VGS = -15V, VDS = 0V
-2 nA TA = 150oC
IG Gate Operating Current
-1
-500
-500 pA VDG = 10V, ID = 5mA
-0.3 nA TA = 125oC
VGS(F)
Gate-Source Forward Voltage
0.7
V IG = 1mA, VDS = 0V
DYNAMIC
gfs
Common-Source Forward Transconductance
6 4.5 9 4.5 9
mS VDG = 10V, ID = 5mA
gos Common-Source Output Conductance 70 200 200 µS f = 1kHz
Ciss Common-Source Input Capacitance
3
Crss Common-Source Reverse Transfer Capacitance 1
pF
VDG = 10V, ID = 5mA
f = 1MHz
en Equivalent Input Noise Voltage
4
nV/ Hz
VDG = 10V, ID = 5mA
f = 10kHz
MATCHING
| VGS1-VGS2| Differential Gate-Source Voltage
6 10 20 mV VDG = 10V, ID = 5mA
| VGS1-VGS2| Gate-Source Voltage Differential Change with
T Temperature
20
20
µV/ oC
T = -55 to 25oC VDG =10V,
T = 25 to 125oC ID = 5mA
IDSS1
IDSS2
Saturation Drain Current Ratio
0.97
VDS = 10V, VGS = 0V
gfs1
gfs2
Transconductance Ratio
0.97
VDG = 10V, ID = 5mA
f= 1 kHz
CMRR
Common Mode Rejection Ratio
85
dB VDD = 5 to 10V, ID = 5mA
NOTES: 1. For design aid only, not subject to production testing.
2. Pulse test; PW = 300µs, duty cycle 3%.




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