파트넘버.co.kr U430 데이터시트 PDF


U430 반도체 회로 부품 판매점

Matched N-Channel Pairs



Vishay Siliconix 로고
Vishay Siliconix
U430 데이터시트, 핀배열, 회로
Matched N-Channel Pairs
U430/431
Vishay Siliconix
PRODUCT SUMMARY
Part Number
U430
U431
VGS(off) (V)
–1 to –4
–2 to –6
V(BR)GSS Min (V)
–25
–25
gfs Min (mS)
10
10
IG Typ (pA)
–15
–15
jVGS1 – VGS2j Typ (mV)
25
25
FEATURES
D Two-Chip Design
D High Slew Rate
D Low Offset/Drift Voltage
D Low Gate Leakage: 15 pA
D Low Noise
D High CMRR: 75 dB
BENEFITS
D Tight Differential Match vs. Current
D Improved Op Amp Speed, Settling Time Accuracy
D Minimum Input Error/Trimming Requirement
D Insignificant Signal Loss/Error Voltage
D High System Sensitivity
D Minimum Error with Large Input Signals
APPLICATIONS
D Wideband Differential Amps
D High-Speed, Temp-Compensated,
Single-Ended Input Amps
D High-Speed Comparators
D Impedance Converters
DESCRIPTION
The U430/431 are matched JFET pairs assembled in a TO-78
package. These devices offer good power gain even at
frequencies beyond 250 MHz.
The TO-78 package is available with full military processing
(see Military Information).
For similar products, see the low-noise U/SST401 series, the
high-gain 2N5911/5912, and the low-leakage U421/423 data
sheets.
TO-78
S1
1
G1 2
S2
7
6 G2
35
D1 4 D2
Case
Top View
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –25 V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA
Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . . . . . . 300 _C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 200_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
Document Number: 70249
S-04031—Rev. E, 04-Jun-01
Power Dissipation :
Per Sidea . . . . . . . . . . . . . . . . . . . . . . . . 300 mW
Totalb . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mW
Notes
a. Derate 2.4 mW/_C above 25_C
b. Derate 4 mW/_C above 25_C
www.vishay.com
8-1


U430 데이터시트, 핀배열, 회로
U430/431
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
Static
Gate-Source
Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Drain Currentb
Gate Reverse Current
Gate Operating Current
Gate-Source Forward Voltage
Dynamic
V(BR)GSS
VGS(off)
IDSS
IGSS
IG
VGS(F)
IG = 1 mA, VDS = 0 V
VDS = 10 V, ID = 1 nA
VDS = 10 V, VGS = 0 V
VGS = 15 V, VDS = 0 V
TA = 150_C
VDG = 10 V, ID = 5 mA
TA = 150_C
IG = 10 mA , VDS = 0 V
Common-Source
Forward Transconductanceb
Common-Source
Output Conductanceb
Common-Source
Input Capacitance
Common-Source
Reverse Transfer Capacitance
Equivalent Input Noise Voltage
gfs
VDS = 10 V, ID = 10 mA , f = 1 kHz
gos
Ciss
VGS = 10 V, VDS = 0 V, f = 1 MHz
Crss
en
VDS = 10 V, ID = 10 mA
f = 100 Hz
High Frequency
Common-Source
Forward Transconductance
Common-Source
Output Conductance
Power-Match
Source Admittance
gfs
gos
VDS = 10 V, ID = 10 mA
f = 100 MHz
gig
Matching
Differential
Gate-Source Voltage
Saturation Drain
Current Ratioc
Transconductance Ratioc
Gate-Source
Cutoff Voltage Ratioc
Differential Gate Current
Common Mode Rejection Ratio
|VGS1VGS2|
IDSS1
IDSS2
gfs1
gfs2
VGS(off)1
VGS(off)2
|IG1IG2|
CMRR
VDG = 10 V, ID = 10 mA
VDS = 10 V, VGS = 0 V
VDS = 10 V, ID = 10 mA, f = 1 kHz
VDS = 10 V, ID = 1 nA
VDG = 10 V, ID = 5 mA
VDG = 5 to 10 V, ID = 10 mA
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
b. Pulse test: PW v300 ms duty cycle v3%.
c. Assumes smaller value in the numerator.
Typb
Limits
U430
U431
Min Max Min Max
35 25
25
1 4 2 6
12 30 24 60
5
150
150
10
150
150
15
10
0.8 1
1
15 10
10
100 250 250
4.5 5
5
2 2.5 2.5
6
14
0.13
12
25
0.95 0.9 1 0.9 1
0.95 0.9 1 0.9 1
0.95 0.9 1 0.9 1
2
75
Unit
V
mA
pA
nA
pA
nA
V
mS
mS
pF
nV
Hz
mS
mV
pA
dB
NZBD
www.vishay.com
8-2
Document Number: 70249
S-04031Rev. E, 04-Jun-01




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