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TYNxx10 반도체 회로 부품 판매점

SCR



STMicroelectronics 로고
STMicroelectronics
TYNxx10 데이터시트, 핀배열, 회로
® TYN210 ---> TYN1010
SCR
FEATURES
s High surge capability
s High on-state current
s High stability and reliability
DESCRIPTION
The TYN210 ---> TYN1010 Family of Silicon
Controlled Rectifiers uses a high performance
glass passivated technology.
This general purpose Family of Silicon Controlled
Rectifiers is designed for power supplies up to
400Hz on resistive or inductive load.
A
G
K
K
A
G
TO-220AB
ABSOLUTE RATINGS (limiting values)
Symbol
IT(RMS)
IT(AV)
ITSM
I2t
dI/dt
Tstg
Tj
Tl
Parameter
RMS on-state current (180° conduction angle)
Average on-state current
(180° conduction angle, single phase circuit)
Non repetitive surge peak on-state current
(Tj initial = 25°C)
I2t value
Critical rate of rise of on-state current
Gate supply: IG = 100mA dIG/dt = 1A/µs
Storage and operating junction temperature range
Tc = 100°C
Tc = 100°C
tp = 8.3ms
tp = 10ms
tp = 10ms
Maximum lead soldering temperature during 10s at 4.5mm from case
Value
10
6.4
Unit
A
A
105 A
100
50 A2s
50 A/µs
-40 to +150
-40 to +125
260
°C
°C
Symbol
Parameter
VDRM
VRRM
Repetitive peak off-state voltage
Tj = 125°C
TYN
Unit
210 410 610 810 1010
200 400 600 800 1000 V
September 2001 - Ed: 1A
1/4


TYNxx10 데이터시트, 핀배열, 회로
TYN210 ---> TYN1010
THERMAL RESISTANCE
Symbol
Rth (j-a)
Rth (j-c) DC
Junction to ambient
Junction to case for DC
Parameter
GATE CHARACTERISTICS (maximum values)
PG(AV) = 1W PGM = 10W (tp = 20µs) IFGM = 4A (tp = 20µs) VRGM = 5V
ELECTRICAL CHARACTERISTICS
Symbol
Test conditions
IGT VD = 12V (DC) RL = 33
VGT VD = 12V (DC) RL = 33
VGD
VD = VDRM
RL = 3.3k
tgt VD = VDRM IG = 40mA
dIG/dt = 0.5A/µs
IL IG = 1.2IGT
IH IT = 100mA Gate open
VTM ITM = 20A tp = 380µs
IDRM
IRRM
VDRM rated
VRRM rated
dV/dt
tq
Linear slope up to
VD = 67% VDRM gate open
VD=67%VDRM ITM= 20A VR= 25V
dITM/dt=30 A/µs dVD/dt= 50V/µs
Tj = 25°C
Tj = 25°C
Tj =110°C
Tj = 25°C
Tj = 25°C
Tj = 25°C
Tj = 25°C
Tj = 25°C
Tj = 110°C
Tj = 110°C
Tj = 110°C
MAX.
MAX.
MIN.
TYP.
TYP.
MAX.
MAX.
MAX.
MAX.
MIN.
TYP.
Value
60
2.5
Unit
°C/W
°C/W
Value
15
1.5
0.2
2
50
30
1.6
0.01
2
200
70
Unit
mA
V
V
µs
mA
mA
V
mA
V/µs
µs
Fig. 1: Maximum average power dissipation ver-
sus average on-state current.
P (W)
12
360 O
10
8
6
4
2
0
012
DC
= 180o
= 120o
= 90 o
= 60o
= 30o
IT(AV)(A)
3456789
Fig. 2: Correlation between maximum average
power dissipation and maximum allowable temper-
atures (Tamb and Tcase) for different thermal
resistances heatsink + contact.
P (W)
12
10
8
Tcase (oC)
Rth = 0 o C/W
2o C/W
4 o C/W -100
6 o C/W
-105
6
= 180o
4
-110
-115
2 -120
Tamb (oC)
0 -125
0 20 40 60 80 100 120 140
2/4




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