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STMicroelectronics |
TYN606
® TYN1006
SCR
FEATURES
s High surge capability
s High on-state current
s High stability and reliability
DESCRIPTION
The TYN606 and TYN1006 Family of Silicon
Controlled Rectifiers are high performance glass
passivated technology.
This general purpose Family of Silicon Controlled
Rectifiers is designed for power supply up to
400Hz on resistive or inductive load.
A
G
K
K
A
G
TO-220AB
ABSOLUTE RATINGS (limiting values)
Symbol
IT(RMS)
IT(AV)
ITSM
I2t
dI/dt
Tstg
Tj
Tl
Parameter
RMS on-state current (180° conduction angle)
Average on-state current
(180° conduction angle, single phase circuit)
Non repetitive surge peak on-state current
(Tj initial = 25°C)
I2t value
Critical rate of rise of on-state current
Gate supply: IG = 100mA dIG/dt = 1A/µs
Storage and operating junction temperature range
Tc = 110°C
Tc = 110°C
tp = 8.3ms
tp = 10ms
tp = 10ms
Maximum lead soldering temperature during 10s at 4.5mm from case
Value
6
3.8
Unit
A
A
73
70
24.5
50
A
A2s
A/µs
-40 to +150
-40 to +125
260
°C
°C
Symbol
Parameter
VDRM
VRRM
Repetitive peak off-state voltage
Tj = 125°C
TYN
606 1006
600 1000
Unit
V
September 2001 - Ed: 1A
1/4
TYN606 TYN1006
THERMAL RESISTANCE
Symbol
Rth (j-a)
Rth (j-c) DC
Junction to ambient
Junction to case for DC
Parameter
GATE CHARACTERISTICS (maximum values)
PG(AV) = 1W PGM = 10W (tp = 20µs) IFGM = 4A (tp = 20µs) VRGM = 5V
ELECTRICAL CHARACTERISTICS
Symbol
Test conditions
IGT VD = 12V (DC) RL = 33Ω
VGT VD = 12V (DC) RL = 33Ω
VGD
VD = VDRM
RL = 3.3kΩ
tgt VD = VDRM IG = 40mA
dIG/dt = 0.5A/µs
IL IG = 1.2IGT
IH IT = 100mA Gate open
VTM ITM = 12A tp = 380µs
IDRM
IRRM
VDRM rated
VRRM rated
dV/dt
tq
Linear slope up to
VD = 67% VDRM gate open
VD=67%VDRM ITM= 12A VR= 25V
dITM/dt=30 A/µs dVD/dt= 50V/µs
Tj = 25°C
Tj = 25°C
Tj =110°C
Tj = 25°C
Tj = 25°C
Tj = 25°C
Tj = 25°C
Tj = 25°C
Tj = 110°C
Tj = 110°C
Tj = 110°C
MAX.
MAX.
MIN.
TYP.
TYP.
MAX.
MAX.
MAX.
MAX.
MIN.
TYP.
Value
60
2.5
Unit
°C/W
°C/W
Value
15
1.5
0.2
2
50
30
1.6
0.01
2
200
70
Unit
mA
V
V
µs
mA
mA
V
mA
V/µs
µs
Fig. 1: Maximum average power dissipation ver-
sus average on-state current.
P (W)
7
360 O
6
5 DC
4 = 180o
3 = 120o
2 = 90 o
= 60o
1
= 30o
IT(AV)(A)
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Fig. 2: Correlation between maximum average
power dissipation and maximum allowable temper-
atures (Tamb and Tcase) for different thermal
resistances heatsink + contact.
P (W)
7
6
5
Tcase (oC)
Rth = 0 o C/W
5o C/W -110
10 o C/W
15 o C/W
4
= 180o
3
-115
2 -120
1
Tamb (oC)
0 -125
0 20 40 60 80 100 120 140
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