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STMicroelectronics |
®
STANDARD
TN16 and TYNx16 Series
16A SCRs
MAIN FEATURES:
Symbol
IT(RMS)
VDRM/VRRM
IGT
Value
16
600 to 1000
25
Unit
A
V
mA
DESCRIPTION
The TYN / TN16 SCR Series is suitable for
general purpose applications.
Using clip assembly technology, they provide a
superior performance in surge current capabilities.
A
KA
G
D2PAK
(TN16-G)
A
G
K
A
K
A
G
TO-220AB
(TYN)
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
IT(RMS) RMS on-state current (180° conduction angle)
T(AV) Average on-state current (180° conduction angle)
ITSM
Non repetitive surge peak on-state
current
I²t
dI/dt
IGM
PG(AV)
Tstg
Tj
VRGM
I²t Value for fusing
Critical rate of rise of on-state current
IG = 2 x IGT , tr ≤ 100 ns
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
Maximum peak reverse gate voltage
tp = 8.3 ms
tp = 10 ms
tp = 10 ms
F = 60 Hz
tp = 20 µs
Tc = 110°C
Tc = 110°C
Tj = 25°C
Tj = 25°C
Value
16
10
200
190
180
Tj = 125°C
50
Tj = 125°C
Tj = 125°C
4
1
- 40 to + 150
- 40 to + 125
5
Unit
A
A
A
A2S
A/µs
A
W
°C
V
April 2002 - Ed: 4A
1/7
TN16 and TYNx16 Series
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
Symbol
Test Conditions
IGT
VGT
VGD
VD = 12 V RL = 33 Ω
VD = VDRM RL = 3.3 kΩ
Tj = 125°C
IH
IL
dV/dt
VTM
Vt0
Rd
IDRM
IRRM
IT = 500 mA Gate open
IG = 1.2 x IGT
VD = 67 % VDRM Gate open
ITM = 32 A tp = 380 µs
Threshold voltage
Dynamic resistance
VDRM = VRRM
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
MIN.
MAX.
MAX.
MIN.
MAX.
MAX.
MIN.
MAX.
MAX.
MAX.
MAX.
Value
2
25
1.3
0.2
40
60
500
1.6
0.77
23
5
2
Unit
mA
V
V
mA
mA
V/µs
V
V
mΩ
µA
mA
THERMAL RESISTANCES
Symbol
Rth(j-c)
Rth(j-a)
Junction to case (DC)
Junction to ambient (DC)
S = Copper surface under tab
Parameter
S = 1 cm²
PRODUCT SELECTOR
Part Number
TN1625-xxxG
TYNx16
600 V
X
X
Voltage (xxx)
800 V
X
X
1000 V
X
X
TO-220AB
D²PAK
Sensitivity
25 mA
25 mA
Value
1.1
60
45
Unit
°C/W
°C/W
Package
D²PAK
TO-220AB
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