파트넘버.co.kr VN0106 데이터시트 PDF


VN0106 반도체 회로 부품 판매점

N-Channel Enhancement-Mode Vertical DMOS FET



Supertex  Inc 로고
Supertex Inc
VN0106 데이터시트, 핀배열, 회로
VN0106
N-Channel Enhancement-Mode
Vertical DMOS FET
Features
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
Applications
Motor controls
Converters
Amplifiers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
General Description
This enhancement-mode (normally-off) transistor utilizes
a vertical DMOS structure and Supertex’s well-proven,
silicon-gate manufacturing process. This combination
produces a device with the power handling capabilities
of bipolar transistors and the high input impedance and
positive temperature coefficient inherent in MOS devices.
Characteristic of all MOS structures, this device is free
from thermal runaway and thermally-induced secondary
breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
Ordering Information
Device
Package Option
TO-92
VN0106
VN0106N3-G
-G indicates package is RoHS compliant (‘Green’)
BVDSS/BVDGS
(V)
60
RDS(ON)
(max)
(Ω)
3.0
Pin Configuration
ID(ON)
(min)
(A)
2.0
Absolute Maximum Ratings
Parameter
Value
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
BVDSS
BVDGS
±20V
Operating and storage temperature -55OC to +150OC
Soldering temperature*
300OC
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
* Distance of 1.6mm from case for 10 seconds.
SOURCE
DRAIN
GATE
TO-92 (N3)
Product Marking
SiVN YY = Year Sealed
0 1 0 6 WW = Week Sealed
YYWW
= “Green” Packaging
Package may or may not include the following marks: Si or
TO-92 (N3)
1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com


VN0106 데이터시트, 핀배열, 회로
VN0106
Thermal Characteristics
Package
(continIDuous)
(mA)
TO-92
350
Notes:
† ID (continuous) is limited by max rated Tj .
ID
(pulsed)
(A)
2.0
Power Dissipation
@TC = 25OC
(W)
1.0
θjc
(OC/W)
125
θja
(OC/W)
170
IDR
(mA)
350
IDRM
(A)
2.0
Electrical Characteristics (TA = 25OC unless otherwise specified)
Sym Parameter
Min Typ Max Units Conditions
BVDSS Drain-to-source breakdown voltage
60 - - V VGS = 0V, ID = 1.0mA
VGS(th) Gate threshold voltage
0.8 - 2.4 V VGS = VDS, ID= 1.0mA
ΔVGS(th) Change in VGS(th) with temperature
- -3.8 -5.5 mV/OC VGS = VDS, ID= 1.0mA
IGSS Gate body leakage
- - 100 nA VGS = ± 20V, VDS = 0V
IDSS Zero gate voltage drain current
- - 1.0
VGS = 0V, VDS = Max Rating
-
-
100
µA VDS = 0.8 Max Rating,
VGS = 0V, TA = 125°C
ID(ON) On-state drain current
0.5 1.0
2.0 2.5
-
-
A VGS = 5.0V, VDS = 25V
VGS = 10V, VDS = 25V
RDS(ON) Static drain-to-source on-state resistance
- 3.0 5.0
- 2.5 3.0
Ω VGS = 5.0V, ID = 250mA
VGS = 10V, ID = 1.0A
ΔRDS(ON) Change in RDS(ON) with temperature
- 0.70 1.0 %/OC VGS = 10V, ID = 1.0A
GFS Forward transductance
300 450
- mmho VDS = 25V, ID = 500mA
CISS
COSS
CRSS
Input capacitance
Common source output capacitance
Reverse transfer capacitance
- 55 65
VGS = 0V,
- 20 25 pF VDS = 25V,
- 5.0 8.0
f = 1.0MHz
td(ON)
tr
td(OFF)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
- 3.0 5.0
- 5.0 8.0
VDD = 25V,
-
6.0 9.0
ns ID = 1.0A,
RGEN = 25Ω
- 5.0 8.0
VSD Diode forward voltage drop
- 1.2 1.8
V VGS = 0V, ISD = 1.0A
trr Reverse recovery time
- 400 -
ns VGS = 0V, ISD = 1.0A
Notes:
1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
10V
INPUT
0V 10%
t(ON)
90%
t(OFF)
td(ON)
tr
td(OFF)
tF
VDD
OUTPUT
0V
10%
90%
10%
90%
PULSE
GENERATOR
RGEN
INPUT
VDD
RL
OUTPUT
D.U.T.
1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com
2




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