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XM28C040P-15 반도체 회로 부품 판매점

High Density 5 Volt Byte Alterable Nonvolatile Memory Array



Xicor Inc. 로고
Xicor Inc.
XM28C040P-15 데이터시트, 핀배열, 회로
4 Megabit Puma Module
XM28C040P
512K x 8 Bit
High Density 5 Volt Byte Alterable Nonvolatile Memory Array
FEATURES
• High Density Memory Module
—150ns, 200ns, and 250ns Access Times
Available
—4 Megabit Memory in 1 square inch.
• Flexible Multiplane Architecture
—Four Separate Chip Selects
—32 Separate I/Os
• User Configurable I/Os—x8, x16, or x32
• User Configurable Page Size—64 Double-
words, 128 Words, or 256 Bytes
—Concurrent Read/Write Operations
• Able to Continue Reading During a
Nonvolatile Write Cycle.
• 5 Volt Byte or Page Alterable
—No Erase Before Write
• Software Data Protection
• Early End of Write Polling
—DATA Polling
—Toggle Bit Polling
• High Reliability
—Endurance: 100,000 Cycles
—Data Retention: 100 Years
DESCRIPTION
The XM28C040P is a high density CMOS byte alter-
able nonvolatile memory array constructed on a co-
fired ceramic substrate using Xicor’s 128K x 8 compo-
nents in 32-pad leadless chip carriers. The Substrate is
a 66-pin ceramic pin grid array.
The module is configured with four separate chip
enable and write enable inputs and 32 separate I/Os.
This, along with the small footprint, provides the end
user with a large degree of flexibility in board layout and
memory configuration. In addition, with the large num-
ber of pins and the growth path being implemented, the
module will be able to grow to 16 megabits.
FUNCTIONAL DIAGRAM
OE WE1 CE1
WE2 CE2
WE3 CE3
WE4 CE4
128K x 8
128K x 8
128K x 8
128K x 8
A0-A16 I/O0-I/O7
I/O8-I/O15
I/O16-I/O23
I/O24-I/O31
©Xicor, 1995, 1996 Patents Pending
7053 8/13/97 T0/C0/D0 SH
1 Characteristics subject to change without notice


XM28C040P-15 데이터시트, 핀배열, 회로
XM28C040P
PIN CONFIGURATION
1 12 23
I/O8 WE2 CE2
I/O9 A10 I/O14
I/O10 GND I/O13
NC I/O11 I/O12
A16 OE A11
A9 A8 I/O3
A0 A15 WE1
NC VCC CE
I/O0 A10 I/O7
I/O1 NC I/O6
I/O2 I/O4 I/O5
11 22 33
PACKAGE INFORMATION
1.09+/-.010 SQ
.050 TYP
.100 TYP
PIN #1
IDENTIFIER
(NOT CHAMFERED)
.100 TYP
.600 TYP
34 45 56
I/O22 VCC CE4
I/O23 A10 I/O28
I/O24 WE4 I/O27
A7 I/O25 I/O26
A12 A4 A1
NC/VBB A5 A2
A14 A6 A3
A13 WE3 CE3
I/O15 A10 I/O21
I/O16 GND I/O20
I/O17 I/O18 I/O19
44 55 66
.149+/-.015
.180 .320 MAX
.050
.018
0.15
ALL MEASUREMENTS IN INCHES
.040
.410
2
.130
.164




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제조업체: Xicor Inc.

( xicor )

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High Density 5 Volt Byte Alterable Nonvolatile Memory Array - Xicor Inc.