파트넘버.co.kr K9F1G08Q0M-YIB0 데이터시트 PDF


K9F1G08Q0M-YIB0 반도체 회로 부품 판매점

1Gb Gb 1.8V NAND Flash Errata



Samsung semiconductor 로고
Samsung semiconductor
K9F1G08Q0M-YIB0 데이터시트, 핀배열, 회로
ELECTRONICS
March. 2003
San 16 Banwol-Ri
Taean-Eup Hwasung- City
Kyungki Do, Korea
Tel.) 82 - 31 - 208 - 6463
Fax.) 82 - 31 -208 - 6799
1Gb 1.8V NAND Flash Errata
Description : Some of AC characteristics are not meeting the specification.
> AC characteristics : Refer to Table
Affected Products : K9F1G08Q0M-YCB0/YIB0, K9F1G16Q0M-YCB0/YIB0
K9K2G08Q0M-YCB0/YIB0, K9K2G16Q0M-YCB0/YIB0
Improvement schedule : The components targeted to meet the specification
is scheduled to be available by workweek 25 along
with the final specification values.
Workaround : Relax the relevant timing parameters according to the table.
Table
Parameters
tWC
Specification
45
Relaxed Condition 80
tWH
15
20
tWP
25
60
UNIT : ns
tRC tREH tRP tREA tCEA
50 15 25 30 45
80 20 60 60 75
Sincerely,
Product Planning & Application Eng.
Memory Division
Samsung Electronics Co.
1


K9F1G08Q0M-YIB0 데이터시트, 핀배열, 회로
K9F1G08U0M-VCB0,VIB0,FCB0,FIB0
K9F1G08Q0M-YCB0,YIB0,PCB0,PIB0 K9F1G16Q0M-YCB0,YIB0,PCB0,PIB0
K9F1G08U0M-YCB0,YIB0,PCB0,PIB0 K9F1G16U0M-YCB0,YIB0,PCB0,PIB0
Document Title
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
FLASH MEMORY
Revision History
Revision No History
0.0 1. Initial issue
Draft Date
July. 5. 2001
Remark
Advance
0.1 1. Iol(R/B) of 1.8V is changed.
- min. value : 7mA --> 3mA
- Typ. value : 8mA --> 4mA
Nov. 5. 2001
2. AC parameter is changed.
tRP(min.) : 30ns --> 25ns
3. A recovery time of minimum 1µs is required before internal circuit gets
ready for any command sequences as shown in Figure 17.
---> A recovery time of minimum 10µs is required before internal circuit gets
ready for any command sequences as shown in Figure 17.
Dec. 4. 2001
0.2 1. ALE status fault in ’Random data out in a page’ timing diagram(page 19)
is fixed.
0.3 1. tAR1, tAR2 are merged to tAR.(Page11)
(Before revision) min. tAR1 = 10ns , min. tAR2 = 50ns
(After revision) min. tAR = 10ns
2. min. tCLR is changed from 50ns to 10ns.(Page11)
3. min. tREA is changed from 35ns to 30ns.(Page11)
4. min. tWC is changed from 50ns to 45ns.(Page11)
5. tRHZ is devided into tRHZ and tOH.(Page11)
- tRHZ : RE High to Output Hi-Z
- tOH : RE High to Output Hold
6. tCHZ is devided into tCHZ and tOH.(Page11)
- tCHZ : CE High to Output Hi-Z
- tOH : CE High to Output Hold
Apr. 25. 2002
0.4
1. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device (Page 35)
Nov. 22.2002
2. Add the data protection Vcc guidence for 1.8V device - below about
1.1V. (Page 36)
0.5 The min. Vcc value 1.8V devices is changed.
K9F1GXXQ0M : Vcc 1.65V~1.95V --> 1.70V~1.95V
Mar. 6.2003
0.6 Pb-free Package is added.
K9F1G08U0M-FCB0,FIB0
K9F1G08Q0M-PCB0,PIB0
K9F1G08U0M-PCB0,PIB0
K9F1G16U0M-PCB0,PIB0
K9F1G16Q0M-PCB0,PIB0
Mar. 13.2003
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the
right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you
have any questions, please contact the SAMSUNG branch office near your office.
SAMSUNG
1




PDF 파일 내의 페이지 : 총 38 페이지

제조업체: Samsung semiconductor

( samsung )

K9F1G08Q0M-YIB0 data

데이터시트 다운로드
:

[ K9F1G08Q0M-YIB0.PDF ]

[ K9F1G08Q0M-YIB0 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


K9F1G08Q0M-YIB0

1Gb Gb 1.8V NAND Flash Errata - Samsung semiconductor