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K6R1008C1A-I20 반도체 회로 부품 판매점

128Kx8 High Speed Static RAM5V Operating/ Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.



Samsung semiconductor 로고
Samsung semiconductor
K6R1008C1A-I20 데이터시트, 핀배열, 회로
PRELIMINARY
K6R1008C1A-C, K6R1008C1A-I
CMOS SRAM
Document Title
128Kx8 High Speed Static RAM(5V Operating), Revolutionary Pin out.
Operated at Commercial and Industrial Temperature Ranges.
Revision History
Rev. No.
Rev. 0.0
Rev. 1.0
Rev. 2.0
Rev. 3.0
Rev. 4.0
History
Initial release with Preliminary.
Release to final Data Sheet.
1.1. Delete Preliminary
Update D.C parameters.
2.1. Update D.C parameters
ITEMS
Previous spec.
(12/15/17/20ns part)
ICC 200/190/180/170mA
ISB 30mA
ISB1 10mA
Updated spec.
(12/15/17/20ns part)
170/165/165/160mA
25mA
8mA
Add Industrial Temperature Range parts and 300mil-SOJ PKG.
3.1. Add 32-Pin 300mil-SOJ Package.
3.2. Add Industrial Temperature Range parts with the same parame-
ters as Commercial Temperature Range parts.
3.2.1. Add K6R1008C1A parts for Industrial Temperature Range.
3.2.2. Add ordering information.
3.2.3. Add the condition for operating at Industrial Temp. Range.
3.3. Add the test condition for VOH1 with VCC=5V±5% at 25°C
3.4. Add timing diagram to define tWP as ″(Timing Wave Form of
Write Cycle(CS=Controlled)
4.1. Delete 17ns Part
Draft Data
Apr. 22th, 1995
Feb. 29th, 1996
Remark
Preliminary
Final
Jul. 16th, 1996
Final
Jun. 2nd, 1997
Final
Feb. 25th, 1998 Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
Rev 4.0
February 1998


K6R1008C1A-I20 데이터시트, 핀배열, 회로
PRELIMINARY
K6R1008C1A-C, K6R1008C1A-I
CMOS SRAM
128K x 8 Bit High-Speed CMOS Static RAM
FEATURES
• Fast Access Time 12, 15, 20ns(Max.)
• Low Power Dissipation
Standby (TTL) : 25mA(Max.)
(CMOS) : 8mA(Max.)
Operating K6R1008C1A-12 : 170mA(Max.)
K6R1008C1A-15 : 165mA(Max.)
K6R1008C1A-20 : 160mA(Max.)
• Single 5.0V±10% Power Supply
• TTL Compatible Inputs and Outputs
• I/O Compatible with 3.3V Device
• Fully Static Operation
- No Clock or Refresh required
• Three State Outputs
• Center Power/Ground Pin Configuration
• Standard Pin Configuration
K6R1008C1A-J : 32-SOJ-400
K6R1008C1A-T: 32-TSOP2-400CF
GENERAL DESCRIPTION
The K6R1008C1A is a 1,048,576-bit high-speed Static Random
Access Memory organized as 131,072 words by 8 bits. The
K6R1008C1A uses 8 common input and output lines and has
an output enable pin which operates faster than address access
time at read cycle. The device is fabricated using SAMSUNGs
advanced CMOS process and designed for high-speed circuit
technology. It is particularly well suited for use in high-density
high-speed system applications. The K6R1008C1A is packaged
in a 400mil 32-pin plastic SOJ or TSOP2 forward.
ORDERING INFORMATION
K6R1008C1A-C12/C15/C20
Commercial Temp.
K6R1008C1A-I12/I15/I20
Industrial Temp.
PIN CONFIGURATION(Top View)
FUNCTIONAL BLOCK DIAGRAM
Clk Gen.
A0
A1
A2
A3
A4
A5
A6
A7
A8
I/O1~I/O8
Data
Cont.
Pre-Charge Circuit
Memory Array
512 Rows
256x8 Columns
I/O Circuit
Column Select
CLK
Gen.
A9 A10 A11 A12 A13 A14 A15 A16
CS
WE
OE
A0 1
A1 2
A2 3
A3 4
CS 5
I/O1 6
I/O2 7
Vcc 8
Vss 9
I/O3 10
I/O4 11
WE 12
A4 13
A5 14
A6 15
A7 16
SOJ/
TSOP2
32 A16
31 A15
30 A14
29 A13
28 OE
27 I/O8
26 I/O7
25 Vss
24 Vcc
23 I/O6
22 I/O5
21 A12
20 A11
19 A10
18 A9
17 A8
PIN FUNCTION
Pin Name
A0 - A16
WE
CS
OE
I/O1 ~ I/O8
VCC
VSS
Pin Function
Address Inputs
Write Enable
Chip Select
Output Enable
Data Inputs/Outputs
Power(+5.0V)
Ground
-2-
Rev 4.0
February 1998




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K6R1008C1A-I20

128Kx8 High Speed Static RAM5V Operating/ Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. - Samsung semiconductor