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PDF K6R1008C1A-I15 Data sheet ( Hoja de datos )
| Número de pieza | K6R1008C1A-I15 | |
| Descripción | 128Kx8 High Speed Static RAM5V Operating/ Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. | |
| Fabricantes | Samsung semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de K6R1008C1A-I15 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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PRELIMINARY
K6R1008C1A-C, K6R1008C1A-I
CMOS SRAM
Document Title
128Kx8 High Speed Static RAM(5V Operating), Revolutionary Pin out.
Operated at Commercial and Industrial Temperature Ranges.
Revision History
Rev. No.
Rev. 0.0
Rev. 1.0
Rev. 2.0
Rev. 3.0
Rev. 4.0
History
Initial release with Preliminary.
Release to final Data Sheet.
1.1. Delete Preliminary
Update D.C parameters.
2.1. Update D.C parameters
ITEMS
Previous spec.
(12/15/17/20ns part)
ICC 200/190/180/170mA
ISB 30mA
ISB1 10mA
Updated spec.
(12/15/17/20ns part)
170/165/165/160mA
25mA
8mA
Add Industrial Temperature Range parts and 300mil-SOJ PKG.
3.1. Add 32-Pin 300mil-SOJ Package.
3.2. Add Industrial Temperature Range parts with the same parame-
ters as Commercial Temperature Range parts.
3.2.1. Add K6R1008C1A parts for Industrial Temperature Range.
3.2.2. Add ordering information.
3.2.3. Add the condition for operating at Industrial Temp. Range.
3.3. Add the test condition for VOH1 with VCC=5V±5% at 25°C
3.4. Add timing diagram to define tWP as ″(Timing Wave Form of
Write Cycle(CS=Controlled)″
4.1. Delete 17ns Part
Draft Data
Apr. 22th, 1995
Feb. 29th, 1996
Remark
Preliminary
Final
Jul. 16th, 1996
Final
Jun. 2nd, 1997
Final
Feb. 25th, 1998 Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
Rev 4.0
February 1998
1 page  
PRELIMINARY
K6R1008C1A-C, K6R1008C1A-I
CMOS SRAM
WRITE CYCLE*
Parameter
Write Cycle Time
Chip Select to End of Write
Address Set-up Time
Address Valid to End of Write
Write Pulse Width(OE High)
Write Pulse Width(OE Low)
Write Recovery Time
Write to Output High-Z
Symbol
tWC
tCW
tAS
tAW
tWP
tWP1
tWR
tWHZ
K6R1008C1A-12
Min Max
12 -
8-
0-
8-
8-
12 -
0-
06
Data to Write Time Overlap
Data Hold from Write Time
End Write to Output Low-Z
tDW 6
tDH 0
tOW 3
-
-
-
* The above parameters are also guaranteed at industrial temperature range.
K6R1008C1A-15
Min Max
15 -
10 -
0-
10 -
10 -
15 -
0-
07
7-
0-
3-
K6R1008C1A-20
Min Max
20 -
12 -
0-
12 -
12 -
20 -
0-
09
9-
0-
3-
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
TIMMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1) (Address Controlled, CS=OE=VIL, WE=VIH)
Address
Data Out
tOH
Previous Valid Data
tAA
tRC
Valid Data
TIMING WAVEFORM OF READ CYCLE(2) (WE=VIH)
Address
CS
OE
Data out
VCC
Current
ICC
ISB
tAA
tCO
tOE
tOLZ
tLZ(4,5)
tPU
50%
tRC
tHZ(3,4,5)
Valid Data
tOHZ
tOH
tPD
50%
-5-
Rev 4.0
February 1998
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet K6R1008C1A-I15.PDF ] | |
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