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Toshiba Semiconductor |
TOSHIBA Diode Silicon Epitaxial Planar Type
JDV2S10T
VCO for UHF Band Radio
· High capacitance ratio: C0.5 V/C2.5 V = 2.5 (typ.)
· Low series resistance: rs = 0.35 Ω (typ.)
· Useful for small size tuner.
Maximum Ratings (Ta = 25°C)
Characteristics
Reverse voltage
Junction temperature
Storage temperature range
Symbol
VR
Tj
Tstg
Rating
10
125
-55~125
Unit
V
°C
°C
JDV2S10T
Unit: mm
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Reverse voltage
Reverse current
Capacitance
Capacitance
Capacitance ratio
Series resistance
VR IR = 1 mA
IR VR = 10 V
C0.5 V
VR = 0.5 V, f = 1 MHz
C2.5 V
VR = 2.5 V, f = 1 MHz
C0.5 V/C2.5 V
¾
rs VR = 1 V, f = 470 MHz
Note: Signal level when capacitance is measured: Vsig = 500 mVrms
Marking
JEDEC
―
JEITA
―
TOSHIBA
1-1H1A
Weight: 0.0013 g (typ.)
Min Typ. Max Unit
10
¾
7.3
2.75
2.4
¾
¾
¾
¾
¾
2.5
0.35
¾
3
8.4
3.4
¾
0.5
V
nA
pF
pF
¾
W
1 2003-03-24
JDV2S10T
2 2003-03-24
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