(PDF) JDV2S07S Datasheet - VCO for UHF Band Radio

Número de pieza	JDV2S07S
Descripción	VCO for UHF Band Radio
Fabricantes	Toshiba Semiconductor
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No Preview Available ! TOSHIBA DIODE Silicon Epitaxial Planar Type JDV2S07S VCO for UHF Band Radio · High Capacitance Ratio: C1V/C4V = 2.3 (typ.) · Low Series Resistance : rs = 0.42 Ω (typ.) · This device is suitable for use in a small-size tuner. Maximum Ratings (Ta = 25°C) Characteristics Reverse voltage Junction temperature Storage temperature range Symbol VR Tj Tstg Rating 10 150 -55~150 Unit V °C °C JDV2S07S Unit: mm Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Reverse voltage Reverse current Capacitance Capacitance ratio Series resistance VR IR C1V C4V C1V/C4V rs IR = 1 mA VR = 10 V VR = 1 V, f = 1 MHz VR = 4 V, f = 1 MHz ¾ VR = 1 V, f = 470 MHz Note: Signal level when capacitance is measured: Vsig = 500 mVrms Marking JEDEC ― JEITA ― TOSHIBA 1-1K1A Weight: 0.0011 g (typ.) Min Typ. Max Unit 10 ¾ ¾ ¾¾ 3 4.0 4.5 4.9 1.85 2.0 2.35 2.0 2.3 ¾ ¾ 0.42 0.55 V nA pF ¾ W D 1 2002-01-23 1 page

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PDF JDV2S07S Data sheet ( Hoja de datos )