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S6008FS21 반도체 회로 부품 판매점

Sensitive SCRs



Teccor Electronics 로고
Teccor Electronics
S6008FS21 데이터시트, 핀배열, 회로
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TO-202
3-lead
Compak
TO-92
TO-263
D2Pak
*TO-218
TO-252
D-Pak
*TO-218X
*TO-220
TO-251
V-Pak
A
K
G
(1 A to 70 A)
E6
General Description
The Teccor line of thyristor SCR semi-conductors are half-wave,
unidirectional, gate-controlled rectifiers which complement Tec-
cor's line of sensitive SCRs. Teccor offers devices with ratings of
1 A to 70 A and 200 V to 1000 V, with gate sensitivities from
10 mA to 50 mA. If gate currents in the 12 µA to 500 µA ranges
are required, see “Sensitive SCRs” section of this catalog.
Three packages are offered in electrically isolated construction
where the case or tab is internally isolated to allow the use of
low-cost assembly and convenient packaging techniques.
The Teccor line of SCRs features glass-passivated junctions to
ensure long-term reliability and parameter stability. Teccor’s
glass offers a rugged, reliable barrier against junction contamina-
tion.
Variations of devices covered in this data sheet are available for
custom design applications. Consult the factory for more informa-
tion.
Features
• Electrically-isolated package
• High voltage capability — 200 V to 1000 V
• High surge capability — up to 950 A
• Glass-passivated chip
Compak SCR
• Surface mount package — 1 A series
• New small profile three-leaded Compak package
• Packaged in embossed carrier tape with 2,500
devices per reel
• Can replace SOT-223
©2002 Teccor Electronics
Thyristor Product Catalog
E6 - 1
http://www.teccor.com
+1 972-580-7777


S6008FS21 데이터시트, 핀배열, 회로
SCRs
Data Sheets
TYPE
KA
G
TO-92
S201E
1 A S401E
S601E
6A
8A
10 A
12 A
Isolated
Part Number
Non-isolated
KG
A
TO-220
A
A
A
KG
A
TO-202
KG
A
TO-220
G
KA
TO-251
V-Pak
G
K
A
Compak
See “Package Dimensions” section for variations. (11)
S2N1
S4N1
S6N1
S2006L
S2006F1
S2006V
S4006L
S4006F1
S4006V
S6006L
S6006F1
S6006V
S8006L
S8006V
SK006L
SK006V
S2008L
S2008F1
S2008R
S2008V
S4008L
S4008F1
S4008R
S4008V
S6008L
S6008F1
S6008R
S6008V
S8008L
S8008R
S8008V
SK008L
SK008R
SK008V
S2010L
S2010F1
S2010R
S2010V
S4010L
S4010F1
S4010R
S4010V
S6010L
S6010F1
S6010R
S6010V
S8010L
S8010R
S8010V
SK010L
SK010R
SK010V
S2012R
S2012V
S4012R
S4012V
S6012R
S6012V
S8012R
S8012V
SK012R
SK012V
IT
(1) (2) (15)
VDRM
& VRRM
AG
A
K
IGT
(4)
TO-252
D-Pak
S2006D
S4006D
S6006D
S8006D
SK006D
S2008D
S4008D
S6008D
S8008D
SK008D
S2010D
S4010D
S6010D
S8010D
SK010D
S2012D
S4012D
S6012D
S8012D
SK012D
Amps
IT(RMS)
MAX
IT(AV)
MAX
1 0.64
1 0.64
1 0.64
6 3.8
6 3.8
6 3.8
6 3.8
6 3.8
8 5.1
8 5.1
8 5.1
8 5.1
8 5.1
10 6.4
10 6.4
10 6.4
10 6.4
10 6.4
12 7.6
12 7.6
12 7.6
12 7.6
12 7.6
Volts
MIN
200
400
600
200
400
600
800
1000
200
400
600
800
1000
200
400
600
800
1000
200
400
600
800
1000
mAmps
MIN MAX
1 10
1 10
1 10
1 15
1 15
1 15
1 15
1 15
1 15
1 15
1 15
1 15
1 15
1 15
1 15
1 15
1 15
1 15
1 20
1 20
1 20
1 20
1 20
Specific Test Conditions
di/dt — Maximum rate-of-rise of on-state current; IGT = 150 mA with
£ 0.1 µs rise time
dv/dt — Critical rate of applied forward voltage
I2t — RMS surge (non-repetitive) on-state current for period of 8.3 ms
for fusing
IDRM and IRRM — Peak off-state forward and reverse current at VDRM and
VRRM
Igt — dc gate trigger current; VD = 12 V dc; RL = 60 W for 1 to 16 A
devices and 30 W for 20 to 70 A devices
IGM — Peak gate current
IH — dc holding current; gate open
IT — Maximum on-state current
ITSM — Peak one-cycle forward surge current
PG(AV) — Average gate power dissipation
PGM — Peak gate power dissipation
tgt — Gate controlled turn-on time; gate pulse = 100 mA; minimum
width = 15 µs with rise time £ 0.1 µs
tq — Circuit commutated turn-off time
VDRM and VRRM — Repetitive peak off-state forward and reverse voltage
Vgt — DC gate trigger voltage; VD = 12 V dc; RL = 60 W for 1 to 16 A
devices and 30 W for 20 to 70 A devices
VTM — Peak on-state voltage at maximum rated RMS current
General Notes
• All measurements are made at 60 Hz with a resistive load at an
ambient temperature of +25 °C unless otherwise specified.
• Operating temperature range (TJ) is -65 °C to +125 °C for TO-92
devices and -40 °C to +125 °C for all other packages.
• Storage temperature range (TS) is -65 °C to +150 °C for TO-92
devices, -40 °C to +150 °C for TO-202 and TO-220 devices, and
-40 °C to +125 °C for all others.
• Lead solder temperature is a maximum of 230 °C for 10 seconds
maximum; ³1/16" (1.59 mm) from case.
• The case temperature (TC) is measured as shown on dimensional
outline drawings in the “Package Dimensions” sectionof this
catalog.
http://www.teccor.com
+1 972-580-7777
E6 - 2
©2002 Teccor Electronics
Thyristor Product Catalog




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