J308 반도체 회로 부품 판매점
SINGLE N-CHANNEL HIGH FREQUENCY JFET
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 Linear Integrated Systems |
Linear Integrated Systems
U/J/SST308
SERIES
SINGLE N-CHANNEL HIGH
FREQUENCY JFET
FEATURES
Direct Replacement For SILICONIX U/J/SST308 SERIES
OUTSTANDING HIGH FREQUENCY GAIN
LOW HIGH FREQUENCY NOISE
ABSOLUTE MAXIMUM RATINGS1
Gpg = 11.5dB
NF = 2.7dB
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
-55 to 150°C
Junction Operating Temperature
-55 to 135°C
Maximum Power Dissipation
Continuous Power Dissipation (J/SST)
350mW
Continuous Power Dissipation (U)
500mW
Maximum Currents
Gate Current (J/SST)
10mA
Gate Current (U)
20mA
Maximum Voltages
Gate to Drain
-25V
Gate to Source
-25V
TO-18
BOTTOM VIEW
D 2 3G
S1
J SERIES
TO-92
BOTTOM VIEW
DSG
123
SST SERIES
SOT-23
TOP VIEW
D1
S2
3G
COMMON ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL CHARACTERISTIC
MIN TYP MAX UNIT
BVGSS
VGS(F)
IG
rDS(on)
en
NF
Gpg
Gate to Source Breakdown Voltage
-25
Gate to Source Forward Voltage
0.7
Gate Operating Current
-15
Drain to Source On Resistance
35
Equivalent Noise Voltage
6
Noise Figure
f = 105MHz
f = 450MHz
1.5
2.7
Power Gain2
f = 105MHz
f = 450MHz
16
11.5
V
1
pA
Ω
nV/√Hz
dB
gfg
Forward
Transconductance
f = 105MHz
f = 450MHz
gog
Output Conductance
f = 105MHz
f = 450MHz
14
13
0.16
0.55
mS
CONDITIONS
IG = -1µA, VDS = 0V
IG = 10mA, VDS = 0V
VDG = 9V, ID = 10mA
VGS = 0V, ID = 1mA
VDS = 10V, ID = 10mA, f = 100Hz
VDS = 10V, ID = 10mA
Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
SPECIFIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)
SYM. CHARACTERISTIC
TYP J/SST308 J/SST309 J/SST310
MIN MAX MIN MAX MIN MAX
VGS(off) Gate to Source Cutoff Voltage
IDSS Source to Drain Saturation Current3
-1 -6.5 -1 -4 -2 -6.5
12 60 12 30 24 60
Ciss Input Capacitance
4555
Crss Reverse Transfer Capacitance
1.9
2.5
2.5
2.5
gfs Forward Transconductance
14 8
10
8
gos Output Conductance
110 250 250 250
UNIT
V
mA
pF
mS
µS
CONDITIONS
VDS = 10V, ID = 1nA
VDS = 10V, VGS = 0V
VDS = 10V, VGS = -10V
f = 1MHz
VDS = 10V, ID = 10mA
f = 1kHz
SPECIFIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)
SYM. CHARACTERISTIC
TYP U308
U309
U310
MIN MAX MIN MAX MIN MAX
VGS(off) Gate to Source Cutoff Voltage
IDSS Source to Drain Saturation Current3
-1 -6.5 -1
12 60 12
-4 -2.5 -6.5
30 24 60
Ciss Input Capacitance
4555
Crss Reverse Transfer Capacitance
1.9
2.5
2.5
2.5
gfs Forward Transconductance
14 10
10
10
gos Output Conductance
110 250 250 250
UNIT
V
mA
pF
mS
µS
CONDITIONS
VDS = 10V, ID = 1nA
VDS = 10V, VGS = 0V
VDS = 10V, VGS = -10V
f = 1MHz
VDS = 10V, ID = 10mA
f = 1kHz
TO-18
Three Lead
0.195 DIA.
0.175
0.030
MAX.
0.230 DIA.
0.209
0.150
0.115
3 LEADS
0.019 DIA.
0.016
0.500 MIN.
0.100
0.050
2
13
45°
0.046
0.036
0.048
0.028
TO-92
0.175
0.195
0.170 LS XXX
0.195 YYWW
0.130
0.155
0.045
0.060
0.500
0.610
0.016
0.022
0.014
0.020
123
0.095
0.105
0.045
0.055
DIMENSIONS
IN INCHES.
SOT-23
0.89
1.03
1.78
2.05
1
2
0.37
0.51
3 2.80
3.04
1.20
1.40
0.89 2.10
1.12 2.64
0.085
0.180
0.013
0.100
0.55
DIMENSIONS IN
MILLIMETERS
1. Absolute maximum ratings are limiting values above which serviceability may be impaired.
2. Measured at optimum input noise match.
3. Pulse test: PW ≤ 300µs, Duty Cycle ≤ 3%
Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its
use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Linear Integrated Systems.
Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
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