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Fairchild Semiconductor |
KSB546
TV Vertical Deflection Output
• Collector-Base Voltage : VCBO = -200V
• Collector Current : lC = -2A
• Collector Dissipation : PC= 25W (TC=25°C)
• Complement to KSD401
1 TO-220
1.Base 2.Collector 3.Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)Y
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
Value
- 200
- 150
-5
-2
25
150
- 55 ~ 150
Units
V
V
V
A
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
BVCEO
BVEBO
ICBO
hFE
VCE(sat)
fT
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product
IC = - 500µA, IE = 0
IC = - 10mA, IB = 0
IE = - 500uA, IC = 0
VCB = - 150V, IE = 0
VCE = - 10V, IE = - 0.4A
IC = - 500mA, IB = - 50mA
VCE = - 10V, IC = - 0.4A
Min.
- 200
- 150
-5
40
Typ.
5
Max.
- 50
240
-1
Units
V
V
V
µA
V
MHz
hFE Classification
Classification
hFE
R
40 ~ 80
O
70 ~ 140
Y
120 ~ 240
©2000 Fairchild Semiconductor International
Rev. A, February 2000
Typical Characteristics
-1.0
-0.9
-0.8
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
-0.1
-0.0
-0
IB = -8mA
IB = -7mA
IB = -6mA
IB = -5mA
IB = -4mA
IB = -3mA
IB = -2mA
IB = -1mA
-5 -10 -15 -20 -25 -30 -35 -40 -45 -50
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
-10
IC = 10 IB
-1 VBE(sat)
VCE(sat)
-0.1
-0.01
-0.01
-0.1 -1
IC[A], COLLECTOR CURRENT
-10
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
-10
1. Tc=25℃
2. *single pulse
Thermal limitation
-1
*1ms
S/B limitation
S/B limitation
-0.1
-10
-100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area
©2000 Fairchild Semiconductor International
1000
VCE = -10V
100
10
-0.01
-0.1 -1
IC[A], COLLECTOR CURRENT
Figure 2. DC current Gain
-10
1000
f=1MHz
IE=0
100
10
-1
-10 -100
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 4. Collector Output Capacitance
40
35
30
25
20
15
10
5
0
0 25 50 75 100 125 150
TC[oC], CASE TEMPERATURE
Figure 6. Power Derating
Rev. A, February 2000
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