파트넘버.co.kr KM29U128IT 데이터시트 PDF


KM29U128IT 반도체 회로 부품 판매점

16M x 8 Bit NAND Flash Memory



Samsung semiconductor 로고
Samsung semiconductor
KM29U128IT 데이터시트, 핀배열, 회로
KM29U128T, KM29U128IT
Document Title
16M x 8 Bit NAND Flash Memory
Revision History
Revision No. History
0.0 Initial issue.
1.0 1) Changed tPROG Parameter : 1ms(Max.) 500µs(Max.)
2) Changed tBERS Parameter : 4ms(Max.) 3ms(Max.)
3) Changed Input and Output Timing Level 0.8V and 2.0V 1.5V
1.1 1) Changed tR Parameter : 7µs(Max.) 10µs(Max.)
2) Changed Nop : 10 cycles(Max.) Main Array 2 cycles(Max.)
Spare Array 3 cycles(Max.)
3) Added CE dont’ care mode during the data-loading and reading
FLASH MEMORY
Draft Date
April 10th 1998
July 14th 1998
Remark
Preliminary
Final
April 10th 1999
Final
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near you.
1


KM29U128IT 데이터시트, 핀배열, 회로
KM29U128T, KM29U128IT
16M x 8 Bit NAND Flash Memory
FEATURES
Voltage supply : 2.7V~3.6V
Organization
- Memory Cell Array : (16M + 512K)bit x 8bit
- Data Register : (512 + 16)bit x8bit
Automatic Program and Erase
- Page Program : (512 + 16)Byte
- Block Erase : (16K + 512)Byte
528-Byte Page Read Operation
- Random Access : 10µs(Max.)
- Serial Page Access : 50ns(Min.)
Fast Write Cycle Time
- Program time : 200µs(typ.)
- Block Erase time : 2ms(typ.)
Command/Address/Data Multiplexed I/O port
Hardware Data Protection
- Program/Erase Lockout During Power Transitions
Reliable CMOS Floating-Gate Technology
- Endurance : 1M Program/Erase Cycles
- Data Retention : 10 years
Command Register Operation
Package : 48 - pin TSOP Type1 - 12 x 20 / 0.5 mm pitch
PIN CONFIGURATION
FLASH MEMORY
GENERAL DESCRIPTION
The KM29U128 is a 16M(16,777,216)x8bit NAND Flash Mem-
ory with a spare 512K(524,288)x8bit. Its NAND cell provides
the most cost-effective solution for the solid state mass storage
market. A program operation programs the 528-byte page in
typically 200µs and an erase operation can be performed in typ-
ically 2ms on a 16K-byte block. Data in the page can be read
out at 50ns cycle time per byte. The I/O pins serve as the ports
for address and data input/output as well as command inputs.
The on-chip write controller automates all program and erase
functions including pulse repetition, where required, and inter-
nal verify and margining of data. Even the write-intensive sys-
tems can take advantage of the KM29U128s extended
reliability of 1,000,000 program/erase cycles by providing either
ECC(Error Correcting Code) or real time mapping-out algo-
rithm. These algorithms have been implemented in many mass
storage applications and also the spare 16 bytes of a page
combined with the other 512 bytes can be utilized by system-
level ECC.
The KM29U128 is an optimum solution for large nonvolatile
storage applications such as solid state file storage, digital
voice recorder, digital still camera and other portable applica-
tions requiring non-volatility.
PIN DESCRIPTION
N.C
N.C
N.C
N.C
N.C
SE
R/B
RE
CE
N.C
N.C
Vcc
Vss
N.C
N.C
CLE
ALE
WE
WP
N.C
N.C
N.C
N.C
N.C
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48-pin TSOP1
Standard Type
12mm x 20mm
48 N.C
47 N.C
46 N.C
45 N.C
44 I/O7
43 I/O6
42 I/O5
41 I/O4
40 N.C
39 N.C
38 N.C
37 Vcc
36 Vss
35 N.C
34 N.C
33 N.C
32 I/O3
31 I/O2
30 I/O1
29 I/O0
28 N.C
27 N.C
26 N.C
25 N.C
Pin Name
I/O0 ~ I/O7
CLE
ALE
CE
RE
WE
WP
SE
R/B
VCC
VSS
N.C
Pin Function
Data Input/Outputs
Command Latch Enable
Address Latch Enable
Chip Enable
Read Enable
Write Enable
Write Protect
Spare area Enable
Ready/Busy output
Power(+2.7V~3.6V)
Ground
No Connection
NOTE : Connect all VCC and VSS pins of each device to common power supply outputs.
Do not leave VCC or VSS disconnected.
2




PDF 파일 내의 페이지 : 총 26 페이지

제조업체: Samsung semiconductor

( samsung )

KM29U128IT data

데이터시트 다운로드
:

[ KM29U128IT.PDF ]

[ KM29U128IT 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


KM29U128IT

16M x 8 Bit NAND Flash Memory - Samsung semiconductor