6N135 반도체 회로 부품 판매점
IRED & PHOTO IC (DIGITAL LOGIC ISOLATION)
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 Toshiba Semiconductor |
TOSHIBA Photocoupler GaAℓAs Ired & Photo IC
6N135, 6N136
Digital Logic Isolation
Line Receiver
Power Supply Control
Switching Power Supply
Transistor Inverter
6N135,6N136
Unit: mm
The TOSHIBA 6N135 and 6N136 consists of a high emitting diode and a
one chip photo diode−transistor.
Each unit is 8−lead DIP package.
• Isolation voltage: 2500 Vrms (min)
• High speed: tpHL, tpLH = 0.5 μs (typ.) (RL = 1.9kΩ)
• TTL compatible
• If base pin is open, output signal will be noisy by environmental
condition. For this base, TLP550 is suitable
• UL recognized: UL1577, file no. E67349
TOSHIBA
11−10C4
Weight: 0.54 g (typ.)
Pin Configurations
18
27
36
45
1 : N.C.
2 : ANODE
3 : CATHODE
4 : N.C.
5 : EMITTER
6 : COLLECTOR
7 : BASE, ANODE
8 : CATHODE
IF
VF 2
3
ICC
IB
IO
8 VCC
7 VB
6 VO
5 GND
Start of commercial production
1982/10
1 2014-09-22
Absolute Maximum Ratings (Ta = 25°C)
6N135,6N136
Characteristic
Symbol
Rating
Unit
Forward current
(Note 1)
Pulse forward current
(Note 2)
Total pulse forward current
(Note 3)
Reverse voltage
Diode power dissipation
(Note 4)
Output current
Peak output current
Emitter−base reverse voltage (pin 5−7)
Supply voltage
Output voltage
Base current (pin 7)
Output power dissipation
(Note 5)
Operating temperature range
Storage temperature range
Lead solder temperature (10s)
(Note 6)
Isolation voltage
(Note 7)
IF
IFP
IFPT
VR
PD
IO
IOP
VEB
VCC
VO
IB
Po
Topr
Tstg
Tsol
BVS
25
50
1
5
45
8
16
5
−0.5 to 15
−0.5 to 15
5
100
−55 to 100
−55 to 125
260
2500
mA
mA
A
V
mW
mA
mA
V
V
V
mA
mW
°C
°C
°C
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc.).
(Note 1)
(Note 2)
(Note 3)
(Note 4)
(Note 5)
(Note 6)
(Note 7)
Derate 0.8 mA above 70°C.
50% duty cycle, 1ms pulse width.
Derate 1.6 mA / °C above 70°C.
Pulse width 1μs, 300pps.
Derate 0.9 mW / °C above 70°C.
Derate 2 mW / °C above 70°C.
Soldering portion of lead: Up to 2mm from the body of the device.
R.H. ≤ 60%, AC, 1minute
2 2014-09-22
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PDF 파일 내의 페이지 : 총 8 페이지
제조업체: Toshiba Semiconductor
( toshiba )
6N135 data
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[ 6N135.PDF ]
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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