파트넘버.co.kr 5270 데이터시트 PDF


5270 반도체 회로 부품 판매점

Silicon NPN triple diffusion mesa type(For horizontal deflection output)



Panasonic Semiconductor 로고
Panasonic Semiconductor
5270 데이터시트, 핀배열, 회로
Power Transistors
2SC5270, 2SC5270A
Silicon NPN triple diffusion mesa type
For horizontal deflection output
Unit: mm
s Features
q High breakdown voltage, and high reliability through the use of a
glass passivation layer
q High-speed switching
q Wide area of safe operation (ASO)
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to 2SC5270
base voltage 2SC5270A
VCBO
1500
1600
Collector to 2SC5270
base voltage 2SC5270A
VCES
1500
1600
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power TC=25°C
dissipation
Ta=25°C
VCEO
VEBO
ICP
IC
IB
PC
600
5
20
12
8
120
3
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
V
A
A
A
W
˚C
˚C
15.5±0.5
φ3.2±0.1
3.0±0.3
5° 5°
4.0
2.0±0.2
1.1±0.1
5.45±0.3
5°
5°
5°
5°
5.45±0.3
0.7±0.1
123
1:Base
2:Collector
3:Emitter
TOP–3E Full Pack Package
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
2SC5270
Collector cutoff
current
2SC5270A
2SC5270
ICBO
2SC5270A
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Storage time
Fall time
IEBO
hFE
VCE(sat)
VBE(sat)
fT
tstg
tf
VCB = 1000V, IE = 0
VCB = 1500V, IE = 0
VCB = 1600V, IE = 0
VEB = 5V, IC = 0
VCE = 5V, IC = 6A
IC = 6A, IB = 1.5A
IC = 6A, IB = 1.5A
VCE = 10V, IC = 0.1A, f = 0.5MHz
IC = 6A, IB1 = 1.5A, IB2 = –3A
min typ max Unit
50
µA
50
1
mA
1
50 µA
5 12
3V
1.5 V
3 MHz
1.5 2.5 µs
0.12 0.2
µs
1


5270 데이터시트, 핀배열, 회로
Power Transistors
140
(1)
120
100
PC — Ta
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink.
(3) Without heat sink
(PC=3.0W)
80
60
40
20 (2)
(3)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
Area of safe operation (ASO)
100
ICP
10 IC
100ms 10ms
t=100µs
1ms
DC
1
0.1
0.01
Non repetitive pulse
0.001 TC=25˚C
1 3 10
30
100 300 1000
Collector to emitter voltage VCE (V)
tstg — IB
10
TC=25˚C
9 IC=6A
fH=64kHz
8
7
6
5
4
3
2
1
0
012345
End-of-scan current IB end (A)
hFE — IC
102
VCE=5V
TC=100˚C
25˚C
–25˚C
10
2SC5270, 2SC5270A
5000
4000
VCE(sat) — IC
IC/IB=4
3000
2000
1000
TC=100˚C –25˚C
25˚C
1
1 10 102 103 104 105
Collector current IC (mA)
0
102 103 104 105
Collector current IC (mA)
Area of safe operation, horizontal operation ASO
50
f=64kHz, TC<90˚C
Area of safe operation with
respect to the single pulse
40
overload curve at the time of
switching ON, shutting down
by the high voltage spark,
holding down and like that,
during horizontal operation.
30
20
10
<1mA
0
0 500 1000 1500 2000
Collector to emitter voltage VCE (V)
tf — IB
1.0
TC=25˚C
0.6 IC=6A
fH=64kHz
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
012345
End-of-scan current IB end (A)
2




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