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Hitachi Semiconductor |
4AK23
Silicon N-Channel Power MOS FET Array
Application
High speed power switching
Features
• Low on-resistance
RDS(on) 0.25 , VGS = 10 V, ID = 2.5 A
• Low drive current
• High speed switching
• High density mounting
• Suitable for H-bridged motor driver
Outline
SP-12TA
1
G
2
D5
G
4
D8
G
9
D 12
G
11
D
1 2 3 4 5 6 7 8 9101112
S 3 S 6 S 7 S 10
1, 5, 8, 12. Gate
2, 4, 9, 11. Drain
3, 6, 7, 10. Source
4AK23
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. 4 Devices operation
Symbol
Ratings
VDSS
100
VGSS
±20
ID
I *1
D(pulse)
5
20
IDR 5
Pch (Tc = 25°C)*2 32
Pch*2
4
Tch 150
Tstg –55 to +150
Unit
V
V
A
A
A
W
W
°C
°C
2
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