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Hitachi Semiconductor |
4AK22
Silicon N-Channel Power MOS FET Array
Application
High speed power switching
Features
• Low on-resistance
RDS(on) 0.4 , VGS = 10 V, ID = 1.5 A
RDS(on) 0.55 , VGS = 4 V, ID = 1.5 A
• Capable of 4 V gate drive
• Low drive current
• High speed switching
• High density mounting
• Suitable for motor driver, solenoid driver and lamp driver
• Discrete packaged devices of same die: 2SK1254(L), 2SK1254(S)
4AK22
Outline
SP-10
3579
DDDD
468
GGG
2G
1 2 3 4 5 6 7 8 9 10
1, 10. Source
1S
S 10
2, 4, 6, 8. Gate
3, 5, 7, 9. Drain
Absolute Maximum Ratings (Ta = 25°C) (1 Unit)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. 4 devices operation
Symbol
Rating
VDSS
120
VGSS
±20
ID
I *1
D(pulse)
3
12
IDR 3
Pch (Tc = 25°C)*2 28
Pch*2
4
Tch 150
Tstg –55 to +150
Unit
V
V
A
A
A
W
W
°C
°C
2
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