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DM-231 반도체 회로 부품 판매점

Magnetoresistance Element



Sony Corporation 로고
Sony Corporation
DM-231 데이터시트, 핀배열, 회로
DM-231
Magnetoresistance Element
For the availability of this product, please contact the sales office.
Description
DM-231 a magnetic sensor using magnetoresist-
M-118 (Plastic)
ance effect is composed of ferromagnetic material
deposited by evaporation on a silicon substrate. It is
suitable for angle of rotation detection.
Features
Low magnetic field and high sensitivity: bridge type
stands for large output voltage
150 mVp-p (Min.) at VCC=5 V, H=14400 A/m
Fitted with bias magnet: stable output.
High reliability: Achieved through silicon nitride
protective film.
Structure
Ferromagnetic thin film circuit (With ferrite magnet)
Applications
Non-contact angle of rotation detection.
Contactless potentiometer.
Absolute Maximum Ratings (Ta=25 °C)
Supply voltage
VCC 10
Storage temperature Tstg –30 to +100
V
°C
Recommended Operating Conditions
Supply voltage
VCC
5
Operating temperature Topr –20 to + 75
V
°C
Electrical Characteristics
Item Symbol
Output voltage
VO
Midpoint potential
Midpoint potential
difference/Output voltage
VA, VB
|VA-VB|
VO
Total resistance
RT
Condition
VCC=5 V , H=14400 A/m (Peak)
AC magnetic field θ =0 °
VCC=5 V , H=0 A/m
VCC=5 V , H=0 A/m
H=14400 A/m (Peak)
AC magnetic field θ =0 °
Min.
150
2.475
Ta=25 °C
Typ. Max. Unit
mVp-p
2.525 V
15 %
500 650 800
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
—1—
E88Z12C5X-TE


DM-231 데이터시트, 핀배열, 회로
DM-231
Equivalent Circuit
1
VCC
RA
2
VA
RB
RD
4
VB
RC
Basic Performance
1) Operation principle
GND
3
External magnetic field H 1
Synthetic
magnetic field (a)
RA
2
RB
Various resistances change according to the direction of
the combnied bias and external magnetic field.
¡) When the direction of the synthetic magnetic field is (a),
RA,RC : Maximum resistance
RB,RD : Minimum resistance
RD ¡¡) When the direction of the synthetic magnetic field is (b),
4 RA,RC : Minimum resistance
RC RB,RD : Maximum resistance
Bias magnetic field
H=14400A/m
3
External magnetic field H
Synthetic magnetic field (b)
Device internal structure
(Back of mark face)
Bias magnetic field
32
41
2) Power supply pin and output pin
2
231
1
1
3) Sensitivity direction
Non-Sensitive
3
4
Sensitive
VCC
2
4
3
The ferromagnetic magnetoresistance element differs
Out put from the semiconductor magnetoresistance element and
Differential amplifier hole element in that it responds only to the magnetic
field within the element's surface. It is not sensitive to
GND the magnetic field perpendicular to the element.
—2—




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