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PDF FDZ2554P Data sheet ( Hoja de datos )
| Número de pieza | FDZ2554P | |
| Descripción | Monolithic Common Drain P-Channel 2.5V Specified PowerTrench | |
| Fabricantes | Fairchild Semiconductor | |
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July 2003
FDZ2554P
Monolithic Common Drain P-Channel 2.5V Specified PowerTrench BGA MOSFET
General Description
Combining Fairchild’s advanced 2.5V specified
PowerTrench process with state-of-the-art BGA
packaging, the FDZ2554P minimizes both PCB space
and RDS(ON). This monolithic common drain BGA
MOSFET embodies a breakthrough in packaging
technology which enables the device to combine
excellent thermal transfer characteristics, high current
handling capability, ultra-low profile packaging, low gate
charge, and low RDS(ON).
Applications
• Battery management
• Load switch
• Battery protection
Features
• –6.5 A, –20 V. RDS(ON) = 28 mΩ @ VGS = –4.5 V
RDS(ON) = 45 mΩ @ VGS = –2.5 V
• Occupies only 0.10 cm2 of PCB area:
1/3 the area of SO-8
• Ultra-thin package: less than 0.90 mm height when
mounted to PCB
• Outstanding thermal transfer characteristics:
significantly better than SO-8
• Ultra-low Qg x RDS(ON) figure-of-merit
• High power and current handling capability
Pin 1
DDD
S SS
GSS
S SS
GSS
DDD
Bottom
Q2
Q1
Pin 1
Top
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
(Note 1a)
– Pulsed
Power Dissipation (Steady State)
(Note 1a)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1b)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
2554P
FDZ2554P
7’’
©2003 Fairchild Semiconductor Corporation
S
G Q1
D
Q2
G
S
Ratings
–20
±12
–6.5
–20
2.1
–55 to +150
60
108
8
Tape width
12mm
Units
V
V
A
W
°C
°C/W
°C/W
°C/W
Quantity
3000 units
FDZ2554P Rev. C3 (W)
1 page  
Typical Characteristics
5
ID = -6.5A
4
3
VDS = -5V
-15V
-10V
2
1
0
0 4 8 12 16
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
RDS(ON) LIMIT
10
1
1ms
10ms
1s
10s
DC
100ms
VGS = -4.5V
0.1
SINGLE PULSE
RθJA = 108oC/W
TA = 25oC
0.01
0.1
1 10
-VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area.
2000
1600
1200
f = 1MHz
VGS = 0 V
Ciss
800
400
Crss
0
0
Coss
5 10 15
-VDS, DRAIN TO SOURCE VOLTAGE (V)
20
Figure 8. Capacitance Characteristics.
50
SINGLE PULSE
40 RθJA = 108°C/W
TA = 25°C
30
20
10
0
0.01
0.1
1 10
t1, TIME (sec)
100 1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJA(t) = r(t) * RθJA
RθJA = 108 °C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.001
0.001
0.01
0.1 1
10
t1, TIME (sec)
100
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
1000
FDZ2554P Rev C3 (W)
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet FDZ2554P.PDF ] | |
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