파트넘버.co.kr FDG6323 데이터시트 PDF


FDG6323 반도체 회로 부품 판매점

Integrated Load Switch



Fairchild Semiconductor 로고
Fairchild Semiconductor
FDG6323 데이터시트, 핀배열, 회로
March 1999
FDG6323L
Integrated Load Switch
General Description
This device is particularly suited for compact
power management in portable electronic
equipment where 2.5V to 8V input and 0.6A
output current capability are needed. This load
switch integrates a small N-Channel power
MOSFET (Q1) which drives a large P-Channel
power MOSFET (Q2) in one tiny SC70-6
package.
Features
VDROP=0.2V @ VIN=5V, IL=0.36A. R(ON) = 0.55
VDROP=0.2V @ VIN=2.5V, IL=0.27A. R(ON) = 0.75Ω.
Very small package outline SC70-6.
Control MOSFET (Q1) includes Zener protection for ESD
ruggedness (>6KV Human Body Model).
High density cell design for extremely low
on-resistance.
Compact industry standard SC70-6 surface mount package.
SC70-6
SOT-23
SuperSOTTM-6
SuperSOTTM-8
SO-8
SOT-223
.23
pin 1
SC70-6
4V IN , R1
5VON/OFF
6R1 , C1
Q2
Q1
3 VOUT , C1
2 VOUT , C1
1 R2
See Application Circuit
EQUIVALENT APPLICATION
IN +VDROP - OUT
ON/OFF
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol Parameter
VIN
VON/OFF
IL
Input Voltage Range
On/Off Voltage Range
Load Current
- Continuous (Note 1)
- Pulsed
(Note 1 & 3)
PD
TJ,TSTG
ESD
Maximum Power Dissipation
(Note 2)
Operating and Storage Temperature Range
Electrostatic Discharge Rating MIL-STD-883D Human Body
Model (100pf/1500Ohm)
THERMAL CHARACTERISTICS
RθJA Thermal Resistance, Junction-to-Ambient (Note 2)
FDG6323L
2.5 - 8
1.5 - 8
0.6
1.8
0.3
-55 to 150
6
415
Units
V
V
A
W
°C
kV
°C/W
© 1999 Fairchild Semiconductor Corporation
FDG6323L Rev.C


FDG6323 데이터시트, 핀배열, 회로
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol Parameter
Conditions
Min Typ Max
OFF CHARACTERISTICS
IFL Forward Leakage Current
ON CHARACTERISTICS (Note 3)
VIN = 8 V, VON/OFF = 0 V
1
VDROP
Conduction Voltage Drop
VIN = 5 V, VON/OFF = 3.3 V, IL = 0.36 A
0.14 0.2
VIN = 2.5 V, VON/OFF = 3.3 V, IL = 0.27 A
0.15 0.2
R(ON)
IL
Q2 - Static On-Resistance
Load Current
VGS = -5 V, ID = -0.6 A
VGS = -2.5 V, ID = -0.5 A
VDROP = 0.2 V, VIN = 5 V, VON/OFF = 3.3 V
VDROP = 0.2 V, VIN = 2.5 V, VON/OFF = 3.3 V
0.41
0.58
0.36
0.27
0.55
0.75
Notes:
1. Range of Vin can be up to 8V, but R1 and R2 must be scaled such that VGS of Q2 does not exceed -8V.
2. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RθJC is guaranteed by design while RθCA is determined by the user's board design.
3. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
Units
µA
V
A
FDG6323L Load Switch Application
APPLICATION CIRCUIT
Q2
IN
R1
C1
OUT
ON/OFF
Q1
Co
LOAD
R2
External Component Recommendation
R1 is required to turn Q2 off.
R2 is optional for Slew Rate Control.
For Co 1uF applications:
First select R2,100 - 1K, for Slew Rate control.
Then select R1 such that R1/R2 ratio maintains between 10 - 100.
FDG6323L Rev.C




PDF 파일 내의 페이지 : 총 7 페이지

제조업체: Fairchild Semiconductor

( fairchild )

FDG6323 data

데이터시트 다운로드
:

[ FDG6323.PDF ]

[ FDG6323 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


FDG6320C

Dual N & P Channel Digital FET - Fairchild Semiconductor



FDG6321

Dual N & P Channel Digital FET - Fairchild Semiconductor



FDG6321C

Dual N & P Channel Digital FET - Fairchild Semiconductor



FDG6322C

Dual N & P Channel Digital FET - Fairchild Semiconductor



FDG6323

Integrated Load Switch - Fairchild Semiconductor



FDG6323L

Integrated Load Switch - Fairchild Semiconductor



FDG6324L

Integrated Load Switch - Fairchild Semiconductor