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Fairchild Semiconductor |
December 2000
FDD6680S
30V N-Channel PowerTrench SyncFET™
General Description
The FDD6680S is designed to replace a single
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
RDS(ON) and low gate charge. The FDD6680S includes
an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology. The performance of
the FDD6680S as the low-side switch in a synchronous
rectifier is indistinguishable from the performance of the
FDD6680A in parallel with a Schottky diode.
Applications
• DC/DC converter
• Motor Drives
Features
• 55 A, 30 V
RDS(ON) = 11 mΩ @ VGS = 10 V
RDS(ON) = 17 mΩ @ VGS = 4.5 V
• Includes SyncFET Schottky body diode
• Low gate charge (17nC typical)
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
.
D
G
S
TO-252
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation
(Note 3)
(Note 1a)
(Note 1)
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJC Thermal Resistance, Junction-to-Case
RθJA Thermal Resistance, Junction-to-Ambient
RθJA Thermal Resistance, Junction-to-Ambient
(Note 1)
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDD6680S
FDD6680S
13’’
2001 Fairchild Semiconductor Corporation
D
G
S
Ratings
30
±20
55
100
60
3.1
1.3
–55 to +150
2.1
40
96
Tape width
16mm
Units
V
V
A
W
°C
°C/W
°C/W
°C/W
Quantity
2500 units
FDD6680S Rev D(W)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Drain-Source Avalanche Ratings (Note 2)
WDSS
Drain-Source Avalanche Energy Single Pulse, VDD = 15 V, ID=14A
IAR Drain-Source Avalanche Current
Off Characteristics
BVDSS
∆BVDSS
∆TJ
IDSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate–Body Leakage, Forward
IGSSR
Gate–Body Leakage, Reverse
VGS = 0 V, ID = 1 mA
ID = 1 mA, Referenced to 25°C
VDS = 24 V,
VGS = 20 V,
VGS = –20 V,
VGS = 0 V
VDS = 0 V
VDS = 0 V
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID(on)
On–State Drain Current
gFS Forward Transconductance
VDS = VGS, ID = 1 mA
ID = 1 mA, Referenced to 25°C
VGS = 10 V,
ID = 12.5 A
VGS = 4.5 V, ID = 10 A
VGS= 10 V, ID = 12.5A, TJ= 125°C
VGS = 10 V,
VDS = 5 V
VDS = 15 V,
ID = 12.5 A
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 15 V,
f = 1.0 MHz
V GS = 0 V,
Switching Characteristics
td(on) Turn–On Delay Time
tr Turn–On Rise Time
td(off) Turn–Off Delay Time
tf Turn–Off Fall Time
Qg Total Gate Charge
Qgs Gate–Source Charge
Qgd Gate–Drain Charge
(Note 2)
VDS = 15 V,
VGS = 10 V,
ID = 1 A,
RGEN = 6 Ω
VDS = 15 V,
VGS = 5 V
ID = 12.5 A,
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current
VSD
Drain–Source Diode Forward
VGS = 0 V, IS = 4.4 A (Note 2)
Voltage
VGS = 0 V, IS = 7 A
(Note 2)
trr
Diode Reverse Recovery Time
IF = 12.5A,
Qrr Diode Reverse Recovery Charge diF/dt = 300 A/µs (Note 3)
Min Typ Max Units
245 mJ
14 A
30
19
V
mV/°C
500
100
–100
µA
nA
nA
123
V
–3.3 mV/°C
9.5
13.5
17
11
17
23
50
27
mΩ
A
S
2010
526
186
pF
pF
pF
10 18
10 18
34 55
14 23
17 24
6.2
5.5
ns
ns
ns
ns
nC
nC
nC
0.49
0.56
20
19.7
4.4
0.7
A
V
nS
nC
FDD6680S Rev D (W)
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