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FDC6320 반도체 회로 부품 판매점

Dual N & P Channel / Digital FET



Fairchild Semiconductor 로고
Fairchild Semiconductor
FDC6320 데이터시트, 핀배열, 회로
October 1997
FDC6320C
Dual N & P Channel , Digital FET
General Description
These dual N & P Channel logic level enhancement mode field
effec transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance.
The device is an improved design especially for low voltage
applications as a replacement for bipolar digital transistors in
load switching applications. Since bias resistors are not
required, this dual digital FET can replace several digital
transistors with difference bias resistors.
Features
N-Ch 25 V, 0.22 A, RDS(ON) = 5 @ VGS= 2.7 V.
P-Ch 25 V, -0.12 A, RDS(ON) = 13 @ VGS= -2.7 V.
Very low level gate drive requirements allowing direct
operation in 3 V circuits. VGS(th) < 1.5 V.
Gate-Source Zener for ESD ruggedness.
>6kV Human Body Model
Replace NPN & PNP digital transistors.
SOT-23
SuperSOTTM-6
SuperSOTTM-8
SO-8
SOT-223
SOIC-16
43
52
61
Absolute Maximum Ratings TA = 25oC unless other wise noted
Symbol Parameter
N-Channel
VDSS, VCC
VGSS, VIN
ID, IO
Drain-Source Voltage, Power Supply Voltage
Gate-Source Voltage,
Drain/Output Current - Continuous
- Pulsed
25
8
0.22
0.5
PD Maximum Power Dissipation
(Note 1a)
(Note 1b)
TJ,TSTG
ESD
Operating and Storage Tempature Ranger
Electrostatic Discharge Rating MIL-STD-883D
Human Body Model (100pf / 1500 Ohm)
THERMAL CHARACTERISTICS
RθJA
Thermal Resistance, Junction-to-Ambient (Note 1a)
RθJC Thermal Resistance, Junction-to-Case (Note 1)
0.9
0.7
-55 to 150
6
140
60
P-Channel
-25
-8
-0.12
-0.5
© 1997 Fairchild Semiconductor Corporation
Units
V
V
A
W
°C
kV
°C/W
°C/W
FDC6320C.Rev C


FDC6320 데이터시트, 핀배열, 회로
DMOS Electrical Characteristics (TA = 25 OC unless otherwise noted )
Symbol
Parameter
Conditions
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
BVDSS/TJ Breakdown Voltage Temp. Coefficient
IDSS Zero Gate Voltage Drain Current
IDSS Zero Gate Voltage Drain Current
IGSS Gate - Body Leakage Current
ON CHARACTERISTICS (Note 2)
VGS(th)/TJ Gate Threshold Voltage Temp. Coefficient
VGS(th)
Gate Threshold Voltage
RDS(ON)
Static Drain-Source On-Resistance
ID(ON) On-State Drain Current
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VGS = 0 V, ID = 250 µA
VGS = 0 V, ID = -250 µA
ID= 250 µA, Referenced to 25 oC
ID = -250 µA, Referenced to 25 oC
VDS= 20 V, VGS= 0 V,
TJ = 55°C
VDS =-20 V, VGS = 0 V,
TJ = 55°C
VGS = 8 V, VDS= 0 V
VGS = -8 V, VDS= 0 V
ID = 250 µA, Referenced to 25 o C
ID= -250 µA, Referenced to 25 o C
VDS = VGS, ID= 250 µA
VDS = VGS, ID= -250 µA
VGS = 2.7 V, ID = 0.2 A
TJ =125°C
VGS = 4.5 V, ID = 0.4 A
VGS = -2.7 V, ID = -0.05 A
TJ =125°C
VGS = -4.5 V, ID = -0.2 A
VGS = 2.7 V, VDS = 5 V
VGS = -2.7 V, VDS = -5 V
VDS = 5 V, ID= 0.4 A
VDS = -5 V, ID= -0.2 A
N-Channel
VDS = 10 V, VGS = 0 V,
f = 1.0 MHz
P-Channel
VDS = -10 V, VGS = 0 V,
f = 1.0 MHz
Type Min Typ Max Units
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
25
-25
P-Ch
N-Ch
P-Ch
V
25 mV /oC
-20
1 µA
10
-1 µA
-10
100 nA
-100 nA
N-Ch
-2.1
P-Ch
1.9
N-Ch 0.65 0.85
P-Ch -0.65 -1
N-Ch
3.8
6.3
3.1
P-Ch
10.6
15
7.9
N-Ch 0.2
P-Ch -0.05
N-Ch
0.2
P-Ch
0.135
mV / oC
1.5 V
-1.5
5
9
4
13
21
10
A
S
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
9.5
11
6
7
1.3
1.4
pF
pF
pF
FDC6320C.Rev C




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제조업체: Fairchild Semiconductor

( fairchild )

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