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PDF FD1000FV-90 Data sheet ( Hoja de datos )
| Número de pieza | FD1000FV-90 | |
| Descripción | HIGH POWER/ HIGH FREQUENCY/ PRESS PACK TYPE | |
| Fabricantes | Mitsubishi Electric Semiconductor | |
| Logotipo |  |
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FD1000FV-90
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES
FD1000FV-90
HIGH POWER, HIGH FREQUENCY,
PRESS PACK TYPE
OUTLINE DRAWING
Dimensions in mm
R4
9
`'39
CATHODE
φ 60
q IF(AV) Average forward current ........................800A
q VRRM Repetitive peak reverse voltage ....... 3500 ~ 4500V
q QRR Reverse recovery charge ................. 1500µC
q Press pack type
TYPE
NAME
ANODE
φ 60
φ 102 MAX
M5 ! 0.8
DEPTH 2.5
APPLICATION
High-power inverters, Fly-wheel diodes in DC choppers, Power supplies as high frequency
rectifiers
MAXIMUM RATINGS
Symbol
Parameter
VRRM
VRSM
VR(DC)
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
70
3500
3500
2800
Voltage class
80
4000
4000
3200
Symbol
IF(RMS)
IF(AV)
IFSM
I2t
Tj
Tstg
—
—
Parameter
RMS forward current
Average forward current
Surge forward current
Current-squared, time integration
Junction temperature
Storage temperature
Mounting force required
Weight
Conditions
f = 60Hz, sine wave θ = 180°, Tf = 88°C
One half cycle at 60Hz, non-repetitive
One cycle at 60Hz
Recommended value 39.2
Standard value
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test conditions
IRRM
VFM
QRR
Rth(j-f)
Repetitive peak reverse current
Forward voltage
Reverse recovery charge
Thermal resistance
Tj = 125°C, VRRM Applied
Tj = 125°C, IFM = 2500A, Instantaneous measurement
IFM = 800A, diF/dt = –30A/µs, VR = 150V,
Tj = 125°C
Junction to fin
90
4500
4500
3600
Ratings
1250
800
20
1.7 × 106
–40 ~ +125
–40 ~ +150
26.5 ~ 43.1
700
Unit
V
V
V
Unit
A
A
kA
A2s
°C
°C
kN
g
Limits
Unit
Min Typ Max
— — 150 mA
——
3.0 V
— — 1500 µC
— — 0.017 °C/W
Aug.1998
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet FD1000FV-90.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| FD1000FV-90 | HIGH POWER/ HIGH FREQUENCY/ PRESS PACK TYPE | Mitsubishi Electric Semiconductor |
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