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Sanyo Semicon Device |
Ordering number:EN4983
FC18
TR:NPN Epitaxial Planar Silicon Transistor
FET:N-Channel Junction Silicon FET
High-Frequency Amp, AM Amp,
Low-Frequency Amp Applications
Features
· Composed of 2 chips, one being equivalent to the
2SK2394 and the other the 2SC4639, in the
convertional CP package, improving the mounting
efficiency greatly.
· Drain and emitter are shared.
Electrical Connection
Package Dimensions
unit:mm
2122
[FC18]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
[FET]
Drain-to-Source Voltage
Gate-to-Drain Voltage
Gate Current
Drain Current
Allowable Power Dissipation
[TR]
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
[Common Ratings]
Total Dissipation
Junction Temperature
Storage Temperature
Symbol
VDSX
VGDS
IG
ID
PD
VCBO
VCEO
VEBO
IC
ICP
IB
PC
PT
Tj
Tstg
· Marking:18
Conditions
1:Collector
2:Gate
3:Source
4:Emitter/Drain
5:Base
SANYO:XP5
Ratings
Unit
15 V
–15 V
10 mA
50 mA
200 mW
55 V
50 V
6V
150 mA
300 mA
30 mA
200 mW
300
150
–55 to +150
mW
˚C
˚C
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/42695MO(KOTO) BX-1576 No.4983-1/5
Continued from preceding page.
Electrical Characteristics at Ta = 25˚C
FC18
Parameter
Symbol
Conditions
[FET]
G-D Breakdown Voltage
Gate Cutoff Current
Cutoff Voltage
Drain Current
Forward Transfer Admittance
Input Capacitance
Reverse Transfer Capacitance
Noise Figure
[TR]
Collector Cuttoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
C-E Saturation Voltage
B-E Saturation Voltage
C-B Breakdown Voltage
C-E Breakdown Voltage
E-B Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
V(BR)GDS
IGSS
VGS(off)
IDSS
| Yfs |
Ciss
Crss
NF
IG=–10µA, VDS=0
VGS=–10V, VDS=0
VDS=5V, ID=100µA
VDS=5V, VGS=0
VDS=5V, VGS=0, f=1kHz
VDS=5V, VGS=0, f=1MHz
VDS=5V, VGS=0, f=1MHz
VDS=5V, Rg=1kΩ, ID=1mA, f=1kHz
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
VCB=35V, IE=0
VEB=4V, IC=0
VCE=6V, IC=1mA
VCE=6V, IC=10mA
VCB=6V, f=1MHz
IC=50mA, IB=5mA
IC=50mA, IB=5mA
IC=10µA, IE=0
IC=1mA, RBE=∞
IE=10µA, IC=0
See specified Test Circuit
See specified Test Circuit
tf See specified Test Circuit
Note*:The FC18 is classified by IDSS as follows : (unit:mA)
6.0 F 120
10.0 G 20.0
16.0 H 32.0
Marking:18
IDSS rank:F, G, H
The specifications shown above are for each individual FET or transistor.
Switching Time Test CIrcuit
Ratings
min typ max
Unit
–15 V
–1.0 nA
–0.3 –0.7 –1.5 V
6.0* 32.0* mA
20 38
mS
10.0 pF
2.9 pF
1.0 dB
135
200
1.7
0.08
0.8
55
50
6
0.15
0.75
0.20
0.1 µA
0.1 µA
400
MHz
pF
0.4 V
1.0 V
V
V
V
µs
µs
µs
No.4983-2/5
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