FC140 반도체 회로 부품 판매점
High-Speed Switching Applications
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 Sanyo Semicon Device |
Ordering number:EN3361
FC140
NPN Epitaxial Planar Silicon Composite Transistor
High-Speed Switching Applications
Features
· Composite type with 2 transistors contained in the
CP package currently in use, improving the mount-
ing efficiency greatly.
· Small output capacitance, high gain-bandwidth
product.
· The FC140 is formed with two chips, being equiva-
lent to the 2SC4452, placed in one package.
Package Dimensions
unit:mm
2074
[FC140]
Electrical Connection
B1:Base 1
E1:Emitter 1
E2:Emitter 2
C2:Collector 2
B2:Base 2
C1:Collector 1
Specifications
SANYO:CP6
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCES
VCEO
VEBO
IC
ICP
IB
PC
PT
Tj
Tstg
1 unit
Conditions
Ratings
40
40
15
5
200
500
40
200
300
150
–55 to +150
Unit
V
V
V
V
mA
mA
mA
mW
mW
˚C
˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditons
Collector Cutoff Current
ICBO VCB=20V, IE=0
Emitter Cutoff Current
IEBO VEB=3V, IC=0
DC Current Gain
hFE VCE=1V, IC=10mA
DC Current Gain Ratio
hFE(small/ VCE=1V, IC=10mA
large)
Gain-Bandwidth Product
fT VCE=10V, IC=10mA
Output Capacitance
Cob VCB=5V, f=1MHz
C-E Saturation Voltage
VCE(sat) IC=10mA, IB=1mA
B-E Saturation Voltage
VBE(sat) IC=10mA, IB=1mA
C-B Breakdown Voltage
V(BR)CBO IC=10µA, IE=0
C-E Breakdown Voltage
V(BR)CEO IC=1mA, RBE=∞
E-B Breakdown Voltage
V(BR)EBO IE=10µA, IC=0
Turn-ON Time
ton See specified Test Circuit.
Storage Time
tstg See specified Test Circuit.
Turn-OFF Time
toff See specified Test Circuit.
Note:The specifications shown above are for each individual transistor.
Ratings
min typ
90
0.6 0.98
max
0.1
0.1
240
Unit
µA
µA
450 750
MHz
1.4 4.0 pF
0.13 0.25 V
0.80 0.85 V
40 V
15 V
5V
8.0 ns
6.0 ns
12 ns
Marking:140
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/4180MO, TS No.3361-1/3
FC140
No.3361-2/3
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FC140 data
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[ FC140.PDF ]
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
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전력반도체 문의 : 010-3582-2743
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