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36MB20A 반도체 회로 부품 판매점

SINGLE PHASE BRIDGE



International Rectifier 로고
International Rectifier
36MB20A 데이터시트, 핀배열, 회로
Bulletin I2715 rev. I 03/03
SINGLE PHASE BRIDGE
Features
Universal, 3 way terminals:
push-on, wrap around or solder
High thermal conductivity package,
electrically insulated case
Center hole fixing
Excellent power/volume ratio
UL E 62320 approved
Nickel plated terminals solderable as per MIL-STD-202 Method
208; solder: Sn/Pb (60/40); solder temperature: 235-260°C
max. time: 8-10 secs
Description
A range of extremely compact, encapsulated
single phase bridge rectifiers offering efficient and
reliable operation. They are intended for use in
general purpose and instrumentation applica-
tions.
Major Ratings and Characteristics
Parameters 26MB-A 36MB-A Units
IO
@ TC
IFSM @ 50Hz
@ 60Hz
I2t @ 50Hz
@ 60Hz
VRRM range
TJ
25 35
65 60
400 475
420 500
790 1130
725 1030
200 to 1200
- 55 to 150
A
oC
A
A
A2s
A2s
V
oC
www.irf.com
MB SERIES
Power Modules
25 A
35 A
1


36MB20A 데이터시트, 핀배열, 회로
MB Series
Bulletin I2715 rev. I 03/03
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Type number Code
VRRM , maximum repetitive
peak reverse voltage
V
26MB..A
36MB..A
20
40
60
80
100
120
200
400
600
800
1000
1200
VRSM , maximum non-
repetitive peak rev. voltage
V
275
500
725
900
1100
1300
I RRM max.
@ TJ max.
2
Forward Conduction
Parameters
IO Maximum DC output current
@ Case temperature
IFSM Maximum peak, one-cycle
non-repetitive forward current
I2t Maximum I2t for fusing
I2t Maximum I2t for fusing
VF(TO)1
VF(TO)2
rt1
rt2
VFM
Low-level of threshold voltage
High-level of threshold voltage
Low-level forward slope resistance
High-level forward slope resistance
Maximum forward voltage drop
IRRM
VINS
Max. DC reverse current
RMS isolation voltage base plate
26MB-A
25
20
65
400
420
335
350
790
725
560
512
5.6
0.76
0.92
6.8
5.0
1.11
10
2700
36MB-A Units Conditions
35
28
60
475
500
400
420
1130
1030
800
730
11.3
0.79
0.96
5.8
4.5
1.14
10
2700
A Resistive or inductive load
A Capacitive load
°C
A t = 10ms No voltage
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied Initial TJ = TJ max.
A2s t = 10ms No voltage
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
KA2s I2t for time tx = I2t x tx ;
0.1 tx 10ms, VRRM = 0V
V (16.7% x π x IF(AV) < I < π x IF(AV)), @ TJmax.
(I > π x IF(AV)), @ TJ max.
m (16.7% x π x IF(AV) < I < π x IF(AV)), @ TJmax.
(I > π x IF(AV)), @ TJ max.
V TJ = 25 oC, IFM = 40APK (26MB) tp = 400µs
TJ = 25 oC, IFM = 55APK (36MB)
µA TJ = 25 oC, per diode at VRRM
V f = 50 Hz, t = 1s
2 www.irf.com




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