|
Hitachi Semiconductor |
2SJ130(L), 2SJ130(S)
Silicon P-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• No secondary breakdown
• Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators
Outline
DPAK-1
4
4
1
23
D
12 3
1. Gate
G 2. Drain
3. Source
4. Drain
S
2SJ130(L), 2SJ130(S)
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Note: 1. Value at TC = 25°C
Symbol
VDSS
VGSS
ID
I D(pulse)
I DR
Pch*1
Tch
Tstg
Ratings
–300
±20
–1
–2
–1
20
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown
voltage
V(BR)DSS –300
Gate to source breakdown
voltage
V(BR)GSS ±20
Gate to source leak current
I GSS
Zero gate voltage drain current IDSS
Gate to source cutoff voltage VGS(off)
Static drain to source on state RDS(on)
resistance
—
—
–2.0
—
Forward transfer admittance
Input capacitance
|yfs|
Ciss
0.25
—
Output capacitance
Coss —
Reverse transfer capacitance Crss —
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
t d(on)
tr
t d(off)
tf
VDF
—
—
—
—
—
Body to drain diode reverse
recovery time
t rr
—
Note: 1. Pulse test
Typ
—
—
—
—
—
6.0
0.4
235
65
16
10
25
35
45
–0.9
200
Max Unit
—V
—V
±10
–100
–4.0
8.5
µA
µA
V
Ω
—S
— pF
— pF
— pF
— ns
— ns
— ns
— ns
—V
— ns
Test conditions
ID = –10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = –240 V, VGS = 0
ID = –1 mA, VDS = –10 V
ID = –0.5 A, VGS = –10 V*1
ID = –0.5 A, VDS = –20 V*1
VDS = –10 V, VGS = 0,
f = 1 MHz
ID = –0.5 A, VGS = –10 V,
RL = 60 Ω
IF = –1 A, VGS = 0
IF = –1 A, VGS = 0,
diF/dt = 50 A/µs
2
|