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Panasonic Semiconductor |
Silicon MOS FETs (Small Signal)
2SJ0536
Silicon P-Channel MOS FET
Secondary battery pack (Li ion battery, etc.)
For switching
s Features
q High-speed switching
q S-mini type package, allowing downsizing of the sets and auto-
matic insertion through the tape/magazine packing.
q Low-voltage drive (Vth: −1 to 2V)
q Low Ron
unit: mm
0.425
2.1±0.1
1.25±0.1
0.425
1
3
2
s Absolute Maximum Ratings (Ta = 25°C)
Parameter
Drain to Source voltage
Gate to Source voltage
Drain current
Max drain current
Allowable power dissipation
Channel temperature
Storage temperature
Symbol
VDS
VGSO
ID
IDP
PD
Tch
Tstg
Ratings
−30
±20
−100
−200
150
150
−55 to +150
Unit
V
V
mA
mA
mW
°C
°C
0.2±0.1
1: Gate
2: Source
3: Drain
EIAJ: SC-70
S-Mini Type Package (3-pin)
Marking Symbol: 2C
s Electrical Characteristics (Ta = 25°C)
Parameter
Drain current
Gate cut-off current
Gate threshold voltage
Forward transfer admittance
Drain to source ON-resistance
Turn-on time
Turn-off time
Symbol
IDSS
IGSS
Vth
| Yfs |
RDS(on)
ton
toff
Conditions
VDS = −30V, VGS = 0
VGS = ±20V, VDS = 0
VDS = −5V, ID = −1µA
VDS = −5V, ID = −10mA
VGS = −5V, ID = −10mA
VDD = −5V, VGS = −5 to 0V, RL = 200Ω
VDD = −5V, VGS = −5 to 0V, RL = 200Ω
min
−1
8
typ max Unit
− 0.1
µA
±1 µA
−2 V
mS
50 75 Ω
100 µs
25 µs
1
Silicon MOS FETs (Small Signal)
PD Ta
200
160
120
80
40
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
–120
–100
ID VDS
Ta=25˚C
–80
VGS=–5.5V
–60
–5.0V
–4.5V
–40
–4.0V
–20 –3.5V
–3.0V
–2.5V
0
0 –2 –4 –6 –8 –10 –12
Drain to source voltage VDS (V)
–240
–200
ID VGS
VDS=–5V
–160
–120
–80
Ta=–25˚C
25˚C
75˚C
–40
0
0 –2 –4 –6 –8 –10 –12
Gate to source voltage VGS (V)
–100
–30
–10
VIN IO
VO=–5V
Ta=25˚C
–3
–1
– 0.3
– 0.1
– 0.03
– 0.01
– 0.1 – 0.3 –1 –3 –10 –30 –100
Output current IO (mA)
2SJ0536
| Yfs | VGS
60
VDS=–5V
50
40
30
20
10
0
0 –2 –4 –6 –8 –10 –12
Gate to source voltage VGS (V)
2
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