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Número de pieza | BAS4 | |
Descripción | CASE 318-08/ STYLE 8 SOT-23 TO-236AB | |
Fabricantes | Motorola Inc | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BAS4 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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SEMICONDUCTOR TECHNICAL DATA
Schottky Barrier Diodes
These Schottky barrier diodes are designed for high speed switching applications,
circuit protection, and voltage clamping. Extremely low forward voltage reduces
conduction loss. Miniature surface mount package is excellent for hand held and
portable applications where space is limited.
3
CATHODE
1
ANODE
Order this document
by BAS40LT1/D
BAS40LT1
Motorola Preferred Device
40 VOLTS
SCHOTTKY BARRIER DIODES
MAXIMUM RATINGS (TJ = 150°C unless otherwise noted)
Rating
Symbol
Value
Unit
Reverse Voltage
Forward Power Dissipation
@ TA = 25°C
Derate above 25°C
VR 40 Volts
PF
225 mW
1.8 mW/°C
Operating Junction and Storage Temperature Range
DEVICE MARKING
TJ, Tstg – 55 to +150
°C
BAS40LT1 = B1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Reverse Breakdown Voltage
(IR = 10 µA)
V(BR)R
Total Capacitance
(VR = 1.0 V, f = 1.0 MHz)
CT
Reverse Leakage
(VR = 25 V)
IR
Forward Voltage
(IF = 0.1 mAdc)
VF
Forward Voltage
(IF = 30 mAdc)
Forward Voltage
(IF = 100 mAdc)
VF
VF
3
1
2
CASE 318 – 08, STYLE 8
SOT– 23 (TO – 236AB)
Min Max Unit
40 — Volts
— 5.0 pF
— 1.0 µAdc
— 380 mVdc
— 500 mVdc
— 1.0 Vdc
Preferred devices are Motorola recommended choices for future use and best overall value.
Thermal Clad is a registered trademark of the Bergquist Company.
REV 1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1997
1
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet BAS4.PDF ] |
Número de pieza | Descripción | Fabricantes |
BAS100ATB6 | SURFACE MOUNT DUAL ISOLATED OPPOSING SILICON SCHOTTKY DIODES | Pan Jit International |
BAS101 | High Voltage Switching Diodes | NXP Semiconductors |
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BAS11 | Controlled avalanche rectifiers | NXP Semiconductors |
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