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Motorola Inc |
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BAS16LT1/D
Switching Diode
MAXIMUM RATINGS
Rating
Continuous Reverse Voltage
Peak Forward Current
Peak Forward Surge Current
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
BAS16LT1 = A6
3
CATHODE
Symbol
VR
IF
IFM(surge)
Value
75
200
500
Symbol
PD
RqJA
PD
RqJA
TJ, Tstg
Max
225
1.8
556
300
2.4
417
– 55 to +150
1
ANODE
Unit
Vdc
mAdc
mAdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(VR = 75 Vdc)
(VR = 75 Vdc, TJ = 150°C)
(VR = 25 Vdc, TJ = 150°C)
Reverse Breakdown Voltage
(IBR = 100 µAdc)
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 50 mAdc)
(IF = 150 mAdc)
Diode Capacitance
(VR = 0, f = 1.0 MHz)
Forward Recovery Voltage
(IF = 10 mAdc, tr = 20 ns)
Reverse Recovery Time
(IF = IR = 10 mAdc, RL = 50 Ω)
Stored Charge
(IF = 10 mAdc to VR = 5.0 Vdc, RL = 500 Ω)
1. FR– 5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
Symbol
IR
V(BR)
VF
CD
VFR
trr
QS
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
©MMotootorroollaa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
BAS16LT1
Motorola Preferred Device
3
1
2
CASE 318 – 08, STYLE 8
SOT– 23 (TO – 236AB)
Min Max Unit
µAdc
— 1.0
— 50
— 30
75 — Vdc
mV
— 715
— 855
— 1000
— 1250
— 2.0 pF
— 1.75 Vdc
— 6.0 ns
— 45 pC
1
BAS16LT1
820 Ω
+10 V
2.0 k
100 µH
0.1 µF
IF
50 Ω OUTPUT
PULSE
GENERATOR
D.U.T.
0.1 µF
tr tp
10%
t
50 Ω INPUT
SAMPLING
OSCILLOSCOPE
VR
90%
INPUT SIGNAL
IF
trr t
iR(REC) = 1.0 mA
IR
OUTPUT PULSE
(IF = IR = 10 mA; MEASURED
at iR(REC) = 1.0 mA)
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
100
10
1.0
0.1
0.2
TA = 85°C
TA = – 40°C
TA = 25°C
0.4 0.6 0.8 1.0
VF, FORWARD VOLTAGE (VOLTS)
Figure 2. Forward Voltage
1.2
10
1.0
0.1
0.01
0.001
0
TA = 150°C
TA = 125°C
TA = 85°C
TA = 55°C
TA = 25°C
10 20 30 40
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Leakage Current
50
0.68
0.64
0.60
0.56
0.52
0
2 46
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
8
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data
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