ADR425 반도체 회로 부품 판매점
Ultraprecision Low Noise/ 2.048 V/2.500 V/ 3.00 V/5.00 V XFET Voltage References
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 Analog Devices |
a Ultraprecision Low Noise, 2.048 V/2.500 V/
3.00 V/5.00 V XFET® Voltage References
ADR420/ADR421/ADR423/ADR425
FEATURES
Low Noise (0.1 Hz to 10 Hz)
ADR420: 1.75 V p-p
ADR421: 1.75 V p-p
ADR423: 2.0 V p-p
ADR425: 3.4 V p-p
Low Temperature Coefficient: 3 ppm/؇C
Long-Term Stability: 50 ppm/1000 Hours
Load Regulation: 70 ppm/mA
Line Regulation: 35 ppm/V
Low Hysteresis: 40 ppm Typical
Wide Operating Range
ADR420: 4 V to 18 V
ADR421: 4.5 V to 18 V
ADR423: 5 V to 18 V
ADR425: 7 V to 18 V
Quiescent Current: 0.5 mA Maximum
High Output Current: 10 mA
Wide Temperature Range: –40؇C to +125؇C
APPLICATIONS
Precision Data Acquisition Systems
High-Resolution Converters
Battery-Powered Instrumentation
Portable Medical Instruments
Industrial Process Control Systems
Precision Instruments
Optical Network Control Circuits
GENERAL DESCRIPTION
The ADR42x series are ultraprecision second-generation XFET
voltage references featuring low noise, high accuracy, and excellent
long-term stability in a SOIC and Mini_SOIC footprints. Patented
temperature drift curvature correction technique and XFET (eXtra
implanted junction FET) technology minimize nonlinearity of the
voltage change with temperature. The XFET architecture offers
superior accuracy and thermal hysteresis to the bandgap
references. It also operates at lower power and lower supply
headroom than the Buried Zener references.
The superb noise, stable, and accurate characteristics of ADR42x
make them ideal for precision conversion applications such as
optical network and medical equipment. The ADR42x trim
terminal can also be used to adjust the output voltage over a
±0.5% range without compromising any other performance. The
ADR42x series voltage references offer two electrical grades and
are specified over the extended industrial temperature range
of –40°C to +125°C. Devices are available in 8-lead SOIC-8 or
30% smaller 8-lead Mini_SOIC-8 packages.
PIN CONFIGURATION
Surface-Mount Packages
8-Lead SOIC
8-Lead Mini_SOIC
TP 1
8 TP
VIN 2 ADR42x 7 NIC
NIC 3 TOP VIEW 6 VOUT
GND 4 (Not to Scale) 5 TRIM
NIC = NO INTERNAL CONNECTION
TP = TEST PIN (DO NOT CONNECT)
Table I. ADR42x Products
ADR420
Products
ADR420
ADR421
ADR423
ADR425
Output
Voltage
VO
2.048
2.50
3.00
5.00
Initial
Accuracy
mV %
Tempco
ppm/°C
1, 3
1, 3
1.5, 4
2, 6
0.05, 0.15
0.04, 0.12
0.04, 0.12
0.04, 0.12
3, 10
3, 10
3, 10
3, 10
XFET is a registered trademark of Analog Devices, Inc.
REV. B
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties that
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700
www.analog.com
Fax: 781/326-8703
© Analog Devices, Inc., 2002
ADR42x–SPECIFICATIONS
ADR420 ELECTRICAL SPECIFICATIONS (@ VIN = 5.0 V to 15.0 V, TA = 25؇C, unless otherwise noted.)
Parameter
Symbol
Conditions
Min Typ Max
Output Voltage
Initial Accuracy
A Grade
Output Voltage
Initial Accuracy
B Grade
Temperature Coefficient A Grade
B Grade
Supply Voltage Headroom
Line Regulation
Load Regulation
Quiescent Current
Voltage Noise
Voltage Noise Density
Turn-On Settling Time
Long-Term Stability
Output Voltage Hysteresis
Ripple Rejection Ratio
Short Circuit to GND
Specifications subject to change without notice.
VO
VOERR
VO
VOERR
TCVO
VIN – VO
∆VO/∆VIN
∆VO/∆ILOAD
IIN
eN p-p
eN
tR
∆VO
VO_HYS
RRR
ISC
–40°C < TA < +125°C
2.045
–3
–0.15
2.047
–1
–0.05
VIN = 5 V to 18 V
–40°C < TA < +125°C
ILOAD = 0 mA to 10 mA
–40°C < TA < +125°C
No Load
–40°C < TA < +125°C
0.1 Hz to 10 Hz
1 kHz
2
1,000 Hours
fIN = 10 kHz
2.048
2.048
2
1
10
390
1.75
60
10
50
40
75
27
2.051
+3
+0.15
2.049
+1
+0.05
10
3
35
70
500
600
Unit
V
mV
%
V
mV
%
ppm/°C
ppm/°C
V
ppm/V
ppm/mA
µA
µA
µV p-p
nV/√Hz
µs
ppm
ppm
dB
mA
ADR421 ELECTRICAL SPECIFICATIONS (@ VIN = 5.0 V to 15.0 V, TA = 25؇C, unless otherwise noted.)
Parameter
Symbol
Conditions
Min Typ Max
Output Voltage
Initial Accuracy
A Grade
Output Voltage
Initial Accuracy
B Grade
Temperature Coefficient A Grade
B Grade
Supply Voltage Headroom
Line Regulation
Load Regulation
Quiescent Current
Voltage Noise
Voltage Noise Density
Turn-On Settling Time
Long-Term Stability
Output Voltage Hysteresis
Ripple Rejection Ratio
Short Circuit to GND
Specifications subject to change without notice.
VO
VOERR
VO
VOERR
TCVO
VIN – VO
∆VO/∆VIN
∆VO/∆ILOAD
IIN
eN p-p
eN
tR
∆VO
VO_HYS
RRR
ISC
–40°C < TA < +125°C
2.497
–3
–0.12
2.499
–1
–0.04
VIN = 5 V to 18 V
–40°C < TA < +125°C
ILOAD = 0 mA to 10 mA
–40°C < TA < +125°C
No Load
–40°C < TA < +125°C
0.1 Hz to 10 Hz
1 kHz
2
1,000 Hours
fIN = 10 kHz
2.500
2.500
2
1
10
390
1.75
80
10
50
40
75
27
2.503
+3
+0.12
2.501
+1
+0.04
10
3
35
70
500
600
Unit
V
mV
%
V
mV
%
ppm/°C
ppm/°C
V
ppm/V
ppm/mA
µA
µA
µV p-p
nV/√Hz
µs
ppm
ppm
dB
mA
–2– REV. B
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관련 데이터시트
ADR420
Ultraprecision Low Noise/ 2.048 V/2.500 V/ 3.00 V/5.00 V XFET Voltage References - Analog Devices
ADR421
Ultraprecision Low Noise/ 2.048 V/2.500 V/ 3.00 V/5.00 V XFET Voltage References - Analog Devices
ADR423
Ultraprecision Low Noise/ 2.048 V/2.500 V/ 3.00 V/5.00 V XFET Voltage References - Analog Devices
ADR425
Ultraprecision Low Noise/ 2.048 V/2.500 V/ 3.00 V/5.00 V XFET Voltage References - Analog Devices