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BC848BWT1 반도체 회로 부품 판매점

CASE 419-02/ STYLE 3 SOT-323/SC-70



Motorola  Inc 로고
Motorola Inc
BC848BWT1 데이터시트, 핀배열, 회로
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BC846AWT1/D
General Purpose Transistors
NPN Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT–323/SC–70 which is
designed for low power surface mount applications.
1
BASE
COLLECTOR
3
BC846AWT1,BWT1
BC847AWT1,BWT1,
CWT1
BC848AWT1,BWT1,
CWT1
MAXIMUM RATINGS
2
EMITTER
Rating
Symbol BC846 BC847 BC848 Unit
Collector – Emitter Voltage
VCEO
65
45
30
V
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
VCBO
80
50
30
V
VEBO
6.0
6.0
5.0
V
IC 100 100 100 mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR– 5 Board, (1)
PD
150
mW
TA = 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Junction and Storage Temperature
DEVICE MARKING
RqJA
PD
TJ, Tstg
833
2.4
– 55 to +150
°C/W
mW/°C
°C
BC846AWT1 = 1A; BC846BWT1 = 1B; BC847AWT1 = 1E; BC847BWT1 = 1F;
BC847CWT1 = 1G; BC848AWT1 = 1J; BC848BWT1 = 1K; BC848CWT1 = 1L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = 10 mA)
BC846 Series
BC847 Series
BC848 Series
Collector – Emitter Breakdown Voltage
(IC = 10 µA, VEB = 0)
BC846 Series
BC847 Series
BC848 Series
Collector – Base Breakdown Voltage
(IC = 10 mA)
BC846 Series
BC847 Series
BC848 Series
Emitter – Base Breakdown Voltage
(IE = 1.0 mA)
BC846 Series
BC847 Series
BC848 Series
Collector Cutoff Current (VCB = 30 V)
(VCB = 30 V, TA = 150°C)
1. FR–5 = 1.0 x 0.75 x 0.062 in
Symbol
V(BR)CEO
V(BR)CES
V(BR)CBO
V(BR)EBO
ICBO
3
1
2
CASE 419–02, STYLE 3
SOT–323/SC–70
Min Typ Max Unit
65 — — V
45 — —
30 — —
80 — — V
50 — —
30 — —
80 — — V
50 — —
30 — —
6.0 — — V
6.0 —
5.0 —
— — 15 nA
— — 5.0 µA
Thermal Clad is a trademark of the Bergquist Company.
©MMotootorroollaa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1


BC848BWT1 데이터시트, 핀배열, 회로
BC846AWT1,BWT1 BC847AWT1,BWT1,CWT1 BC848AWT1,BWT1,CWT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 10 µA, VCE = 5.0 V)
BC846A, BC847A, BC848A
BC846B, BC847B, BC848B
BC847C, BC848C
hFE — 90 — —
— 150 —
— 270 —
(IC = 2.0 mA, VCE = 5.0 V)
BC846A, BC847A, BC848A
BC846B, BC847B, BC848B
BC847C, BC848C
Collector – Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Collector – Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
Base – Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Base – Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
Base – Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)
Base – Emitter Voltage (IC = 10 mA, VCE = 5.0 V)
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
Output Capacitance (VCB = 10 V, f = 1.0 MHz)
Noise Figure (IC = 0.2 mA,
VCE = 5.0 Vdc, RS = 2.0 k,
f = 1.0 kHz, BW = 200 Hz)
BC846A, BC847A, BC848A
BC846B, BC847B, BC848B
BC847C, BC848C
110 180 220
200 290 450
420 520 800
VCE(sat)
— 0.25 V
— 0.6
VBE(sat) — 0.7 — V
— 0.9 —
VBE(on) 580 660 700 mV
— — 770
fT
100 —
— MHz
Cobo
NF
— 4.5 pF
dB
— 10
— 4.0
2.0
1.5
VCE = 10 V
TA = 25°C
1.0
0.8
0.6
0.4
0.3
0.2
0.2
0.5 1.0 2.0 5.0 10 20
50 100 200
IC, COLLECTOR CURRENT (mAdc)
Figure 1. Normalized DC Current Gain
2.0
TA = 25°C
1.6
IC = 200 mA
1.2
IC = IC = IC = 50 mA
10 mA 20 mA
IC = 100 mA
0.8
0.4
0
0.02
0.1 1.0
IB, BASE CURRENT (mA)
10 20
Figure 3. Collector Saturation Region
1.0
0.9 TA = 25°C
0.8 VBE(sat) @ IC/IB = 10
0.7
0.6 VBE(on) @ VCE = 10 V
0.5
0.4
0.3
0.2
0.1 VCE(sat) @ IC/IB = 10
0
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
IC, COLLECTOR CURRENT (mAdc)
Figure 2. “Saturation” and “On” Voltages
1.0
–55°C to +125°C
1.2
1.6
2.0
2.4
2.8
0.2 1.0 10 100
IC, COLLECTOR CURRENT (mA)
Figure 4. Base–Emitter Temperature Coefficient
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data




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